Datasheet > DMN53D0L-13

DMN53D0L-13

更新时间： 2024-01-22 15:12:17

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
5页	338K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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DMN53D0L-13 数据手册

DMN53D0L

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

Features and Benefits

•

N-Channel MOSFET

I_D

V_(BR)DSS

R_DS(ON)

T_A= +25°C

Low On-Resistance

Very Low Gate Threshold Voltage

Low Input Capacitance

500 mA

200 mA

1.6Ω @ V_GS= 10V

2.5Ω @ V_GS= 4.5V

50V

Fast Switching Speed

Low Input/Output Leakage

ESD Protected to 2KV

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

Mechanical Data

This MOSFET has been designed to minimize the on-state resistance

(R_DS(ON)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

•

Case: SOT23

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

•

Weight: 0.008 grams (approximate)

SOT23

ESD protected

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN53D0L-7

DMN53D0L-13

SOT23

3000/Tape & Reel

10000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

53E = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or = Year (ex: B = 2014)

M = Month (ex: 9 = September)

Chengdu A/T Site

Shanghai A/T Site

Date Code Key

Year

2014

2015

2016

2017

2018

2019

2020

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 5

www.diodes.com

May 2014

DMN53D0L

Document number: DS37029 Rev. 2 - 2

12 3 4 5

中文翻译

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与DMN53D0L-13相关器件

型号	品牌	获取价格	描述	数据表
DMN53D0L-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN53D0LDW	DIODES	获取价格	Dual N-Channel MOSFET
DMN53D0LDW-13	DIODES	获取价格	Dual N-Channel MOSFET
DMN53D0LDW-7	DIODES	获取价格	Dual N-Channel MOSFET
DMN53D0LDWQ	DIODES	获取价格	50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN53D0LQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN53D0LQ-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN53D0LQ-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN53D0LT	DIODES	获取价格	N-Channel MOSFET
DMN53D0LT_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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