5秒后页面跳转
DMN5 PDF预览

DMN5

更新时间: 2024-01-27 01:03:33
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管场效应晶体管
页数 文件大小 规格书
6页 168K
描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN5 数据手册

 浏览型号DMN5的Datasheet PDF文件第2页浏览型号DMN5的Datasheet PDF文件第3页浏览型号DMN5的Datasheet PDF文件第4页浏览型号DMN5的Datasheet PDF文件第5页浏览型号DMN5的Datasheet PDF文件第6页 
DMN5/L06VK/L06VAK/010VAK  
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Features  
Mechanical Data  
Dual N-Channel MOSFET  
Low On-Resistance  
Very Low Gate Threshold Voltage, 1.0V max  
Low Input Capacitance  
Fast Switching Speed  
Case: SOT-563  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections: See Diagram  
Terminals: Finish – Matte Tin annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 5  
Ordering Information: See Page 5  
Weight: 0.006 grams (approximate)  
Low Input/Output Leakage  
Ultra-Small Surface Mount Package  
Lead Free By Design/RoHS Compliant (Note 2)  
Halogen and Antimony Free  
"Green" Device (Note 3)  
ESD Protected up to 2kV  
SOT-563  
D2  
G1  
S1  
D2  
S1  
G1  
S2  
G2  
D1  
G2  
S2  
D1  
DMN5L06VK  
DMN5L06VAK  
DMN5010VAK  
TOP VIEW  
ESD protected up to 2kV  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain Source Voltage  
Symbol  
Value  
50  
Unit  
V
VDSS  
VDGR  
50  
V
Drain-Gate Voltage RGS 1.0MΩ  
Gate-Source Voltage  
Continuous  
Pulsed  
±20  
±40  
V
VGSS  
ID  
IDM  
Drain Current (Note 1)  
Continuous  
Pulsed  
280  
1.5  
mA  
A
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
PD  
Rθ  
Value  
250  
Unit  
mW  
°C/W  
°C  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
500  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 6  
www.diodes.com  
January 2010  
© Diodes Incorporated  
DMN5/L06VK/L06VAK/010VAK  
Document number: DS30769 Rev. 8 - 2  

与DMN5相关器件

型号 品牌 获取价格 描述 数据表
DMN5_10 DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5010VAK-13 DIODES

获取价格

Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Meta
DMN5010VAK-7 DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5040LSS DIODES

获取价格

50V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN52D0LT DIODES

获取价格

50V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN52D0U DIODES

获取价格

50V N-Channel Enhancement Mode MOSFET
DMN52D0UDM DIODES

获取价格

50V N-Channel Enhancement Mode MOSFET
DMN52D0UDMQ DIODES

获取价格

50V N-Channel Enhancement Mode MOSFET
DMN52D0UQ DIODES

获取价格

50V N-Channel Enhancement Mode MOSFET
DMN52D0UV DIODES

获取价格

50V N-CHANNEL ENHANCEMENT MODE MOSFET