5秒后页面跳转
DMG9640N PDF预览

DMG9640N

更新时间: 2024-11-11 12:53:23
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
6页 403K
描述
Silicon NPN epitaxial planar type

DMG9640N 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.72
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.125 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DMG9640N 数据手册

 浏览型号DMG9640N的Datasheet PDF文件第2页浏览型号DMG9640N的Datasheet PDF文件第3页浏览型号DMG9640N的Datasheet PDF文件第4页浏览型号DMG9640N的Datasheet PDF文件第5页浏览型号DMG9640N的Datasheet PDF文件第6页 
DMG9640N  
Silicon NPN epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
Unit: mm  
For digital circuits  
DMG5640N in SSMini6 type package  
Features  
High forward current transfer ratio hFE  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: S8  
Basic Part Number  
DRC2143Z + DRA2143Z (Individual)  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Collector (Tr2)  
Panasonic  
4: Emitter (Tr2)  
5: Base (Tr2)  
6: Collecter (Tr1)  
SSMini6-F3-B  
SC-107C  
Packaging  
DMG9640N0R Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)  
JEITA  
Absolute Maximum Ratings T = 25°C  
a
Code  
SOT-666  
Parameter  
Collector-base voltage (Emitter open)  
Tr1 Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
(C1) (B2) (E2)  
6
5
4
50  
V
R1  
R2  
Tr1  
100  
mA  
V
Tr2  
R1  
Collector-base voltage (Emitter open)  
Tr2 Collector-emitter voltage (Base open)  
Collector current  
VCBO  
VCEO  
IC  
–50  
R2  
–50  
V
1
2
3
(E1) (B1) (C2)  
–100  
125  
mA  
mW  
°C  
°C  
Total power dissipation  
PT  
R1  
Tr1  
4.7  
47  
kΩ  
kΩ  
kΩ  
kΩ  
R2  
Resistance  
value  
Overall Junction temperature  
Storage temperature  
Tj  
150  
R1  
Tr2  
4.7  
47  
T
stg  
–55 to +150  
R2  
Publication date: March 2013  
Ver. EED  
1

与DMG9640N相关器件

型号 品牌 获取价格 描述 数据表
DMG9640N0R PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
DMG9640T PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
DMG9640T0R PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
DMG964H1 PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
DMG964H3 PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
DMG964H30R PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
DMG964H50R PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
DMG9926UDM DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMG9926UDM-7 DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMG9926USD DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR