Datasheet > DMG9926USD

DMG9926USD

更新时间： 2024-11-11 09:54:07

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	157K
描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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DMG9926USD 数据手册

DMG9926USD

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

Mechanical Data

•

Dual N-Channel MOSFET

Low On-Resistance

•

Case: SOP-8L

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.072g (approximate)

•

24mΩ @ V_GS= 4.5V

•

29mΩ @ V_GS= 2.5V

37mΩ @ V_GS= 1.8V

•

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 4)

Qualified to AEC-Q101 Standards for High Reliability

•

D₁

D₂

SOP-8L

G₁

G₂

S₁

S₂

TOP VIEW

Internal Schematic

TOP VIEW

N-Channel MOSFET

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

Gate-Source Voltage

V_GSS

±8

_A= 25°C

Drain Current (Note 1)

Steady

State

6.7

I_D

T_A= 70°C

Pulsed Drain Current (Note 3)

I_DM

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

1.3

Unit

P_D

Thermal Resistance, Junction to Ambient

°C/W

R_θ

Operating and Storage Temperature Range

-55 to +150

°C

T_J,T_STG

Notes:

1. Device mounted on FR-4 PCB with minimum recommended pad layout.

2. No purposefully added lead.

3. Repetitive rating, pulse width limited by function temperature.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

1 of 6

www.diodes.com

June 2009

DMG9926USD

Document number: DS31757 Rev. 4 - 2

12 3 4 5 6

中文翻译

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