生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 3.77 |
其他特性: | BUILT IN BIAS RESISITANCE RATIO 10 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 80 | JESD-30 代码: | R-PDSO-F6 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN AND PNP | 最大功率耗散 (Abs): | 0.125 W |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DMG9640T | PANASONIC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, | |
DMG9640T0R | PANASONIC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, | |
DMG964H1 | PANASONIC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, | |
DMG964H3 | PANASONIC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, | |
DMG964H30R | PANASONIC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, | |
DMG964H50R | PANASONIC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, | |
DMG9926UDM | DIODES |
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DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMG9926UDM-7 | DIODES |
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DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMG9926USD | DIODES |
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DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
DMG9926USD-13 | DIODES |
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DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |