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DMG9640N0R PDF预览

DMG9640N0R

更新时间: 2024-11-11 19:37:11
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
6页 880K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, SC-107C, 6 PIN

DMG9640N0R 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:3.77
其他特性:BUILT IN BIAS RESISITANCE RATIO 10最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.125 W
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DMG9640N0R 数据手册

 浏览型号DMG9640N0R的Datasheet PDF文件第2页浏览型号DMG9640N0R的Datasheet PDF文件第3页浏览型号DMG9640N0R的Datasheet PDF文件第4页浏览型号DMG9640N0R的Datasheet PDF文件第5页浏览型号DMG9640N0R的Datasheet PDF文件第6页 
DMG9640N  
Silicon NPN epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
Unit: mm  
For digital circuits  
DMG5640N in SSMini6 type package  
Features  
High forward current transfer ratio hFE  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: S8  
Basic Part Number  
DRC2143Z + DRA2143Z (Individual)  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Collector (Tr2)  
Panasonic  
4: Emitter (Tr2)  
5: Base (Tr2)  
6: Collecter (Tr1)  
SSMini6-F3-B  
SC-107C  
Packaging  
DMG9640N0R Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)  
JEITA  
Absolute Maximum Ratings Ta = 25°C  
Code  
SOT-666  
Parameter  
Collector-base voltage (Emitter open)  
Tr1 Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
(C1) (B2) (E2)  
6
5
4
50  
V
R1  
R2  
Tr1  
100  
mA  
V
Tr2  
R1  
Collector-base voltage (Emitter open)  
Tr2 Collector-emitter voltage (Base open)  
Collector current  
VCBO  
VCEO  
IC  
–50  
R2  
–50  
V
1
2
3
(E1) (B1) (C2)  
–100  
mA  
mW  
°C  
°C  
°C  
Total power dissipation  
PT  
125  
R1  
Tr1  
4.7  
47  
kΩ  
kΩ  
kΩ  
kΩ  
R2  
Resistance  
value  
Junction temperature  
Overall  
Tj  
150  
R1  
Tr2  
4.7  
47  
Operating ambient temperature  
Topr  
–40 to +85  
–55 to +150  
R2  
Storage temperature  
T
stg  
Publication date: December 2013  
Ver. FED  
1

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