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DMG964050R PDF预览

DMG964050R

更新时间: 2024-11-21 19:47:43
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
6页 885K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, SC-107C, 6 PIN

DMG964050R 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, SC-107C, 6 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:7.82最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):160JESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.125 W
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DMG964050R 数据手册

 浏览型号DMG964050R的Datasheet PDF文件第2页浏览型号DMG964050R的Datasheet PDF文件第3页浏览型号DMG964050R的Datasheet PDF文件第4页浏览型号DMG964050R的Datasheet PDF文件第5页浏览型号DMG964050R的Datasheet PDF文件第6页 
DMG96405  
Silicon NPN epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
Unit: mm  
For digital circuits  
DMG56405 in SSMini6 type package  
Features  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: K6  
Basic Part Number  
DRC2114T + DRA2114T (Individual)  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Collector (Tr2)  
Panasonic  
4: Emitter (Tr2)  
Packaging  
5: Base (Tr2)  
6: Collecter (Tr1)  
SSMini6-F3-B  
SC-107C  
DMG964050R Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25°C  
JEITA  
Code  
SOT-666  
Parameter  
Collector-base voltage (Emitter open)  
Tr1 Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
(C1) (B2) (E2)  
6
5
4
50  
V
R1  
100  
mA  
V
Tr1  
Collector-base voltage (Emitter open)  
Tr2 Collector-emitter voltage (Base open)  
Collector current  
VCBO  
VCEO  
IC  
–50  
Tr2  
R1  
–50  
V
1
2
3
–100  
mA  
mW  
°C  
°C  
°C  
(E1) (B1) (C2)  
Total power dissipation  
PT  
125  
Tr1  
Tr2  
R1  
R1  
10  
10  
kΩ  
kΩ  
Resistance  
value  
Junction temperature  
Overall  
Tj  
150  
Operating ambient temperature  
Topr  
–40 to +85  
–55 to +150  
Storage temperature  
T
stg  
Publication date: December 2013  
Ver. DED  
1

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