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DMC904E20R PDF预览

DMC904E20R

更新时间： 2024-11-25 19:23:55
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
3页 485K
描述
RF Small Signal Bipolar Transistor, 0.015A I(C), 2-Element, Very High Frequency Band, Silicon, NPN, HALOGEN FREE, SMINI6-F3-B, 6 PIN

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中文翻译

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DMC904E20R 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.78最大集电极电流 (IC)：0.015 A
集电极-发射极最大电压：20 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：65最高频带：VERY HIGH FREQUENCY BAND
JESD-30 代码：R-PDSO-F6元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
最大功率耗散 (Abs)：0.125 W子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：650 MHz
Base Number Matches：1

DMC904E20R 数据手册

 浏览型号DMC904E20R的Datasheet PDF文件第2页浏览型号DMC904E20R的Datasheet PDF文件第3页 
DMC904E2  
Silicon NPN epitaxial planar type  
For high frequency amplification  
Features  
High transition frequency fT  
ꢀPackage  
ꢀCode  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
SMini6-F3-B  
Package dimension clicks here.→  
Click!  
ꢀBasic Part Number  
ꢀPin Name  
Dual DSC2G02 (Individual)  
1: Emitter (Tr1)  
2: Base (Tr1)  
4: Emitter (Tr2)  
5: Base (Tr2)  
6: Collector (Tr1)  
Packaging  
3: Collector (Tr2)  
DMC904E20R Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)  
ꢀMarking Symbol: D0  
ꢀInternal Connection  
ꢀAbsolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
(C1) (B2) (E2)  
30  
6
5
4
20  
V
3
15  
V
Tr1  
Tr2  
mA  
mW  
°C  
°C  
Total power dissipation  
PT  
125  
1
2
3
(E1) (B1) (C2)  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Emitter-base voltage (Collector open)  
Base-emitter voltage  
Symbol  
Conditions  
Min  
30  
3
Typ  
Max  
Unit  
V
VCBO IC = 10 µA, IE = 0  
VEBO IE = 10 µA, IC = 0  
V
VBE  
hFE  
fT  
VCE = 6 V, IC = 1 mA  
VCE = 6 V, IC = 1 mA  
VCE = 6 V, IC = 1 mA  
0.72  
V
Forward current transfer ratio  
Transition frequency  
65  
260  
450  
650  
0.6  
MHz  
Reverse transfer capacitance  
(Common emitter)  
Cre  
VCE = 6 V, IC = 1 mA, f = 10.7 MHz  
pF  
Power gain  
PG  
NF  
VCE = 6 V, IC = 1 mA, f = 100 MHz  
VCE = 6 V, IC = 1 mA, f = 100 MHz  
24  
dB  
dB  
Noise figure  
3.3  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: June 2012  
Ver. CED  
1
123

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