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DMC9610E0R PDF预览

DMC9610E0R

更新时间： 2024-01-04 21:08:01
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
3页 433K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, HALOGEN FREE, SSMINI5-F4-B, 5 PIN

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DMC9610E0R 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F5Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.74其他特性：BUILT IN BIAS RESISTOR RATIO IS 0.47
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：60
JESD-30 代码：R-PDSO-F5元件数量：2
端子数量：5封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN最大功率耗散 (Abs)：0.125 W
子类别：BIP General Purpose Small Signal表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DMC9610E0R 数据手册

 浏览型号DMC9610E0R的Datasheet PDF文件第2页浏览型号DMC9610E0R的Datasheet PDF文件第3页 
DMC9610E  
Silicon NPN epitaxial planar type  
For digital circuits  
DMC5610E in SSMini5 type package  
Features  
ꢀPackage  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
ꢀCode  
SSMini5-F4-B  
Package dimension clicks here.→  
Click!  
ꢀBasic Part Number  
ꢀPin Name  
Dual DRC2144W (Common emitter)  
1: Base (Tr1)  
4: Collector (Tr2)  
2: Emitter (Common) 5: Collector (Tr1)  
3: Base (Tr2)  
Packaging  
DMC9610E0R Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)  
ꢀMarking Symbol: R1  
ꢀInternal Connection  
ꢀAbsolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
(C1)  
5
(C2)  
4
50  
V
Tr1  
Tr2  
R2  
R2  
100  
mA  
mW  
°C  
R1  
R1  
Total power dissipation  
PT  
125  
Junction temperature  
Tj  
150  
1
2
3
(B1) (E) (B2)  
Storage temperature  
T
stg  
–55 to +150  
°C  
R1  
47  
22  
Resistance value  
kW  
R2  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = 10 mA, IE = 0  
V
V
VCEO IC = 2 mA, IB = 0  
50  
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
0.2  
mA  
mA  
mA  
V
VCE = 10 V, IC = 5 mA  
60  
VCE(sat) IC = 10 mA, IB = 0.5 mA  
VI(on) VCE = 0.2 V, IC = 5 mA  
VI(off) VCE = 5 V, IC = 100 µA  
R1  
0.25  
4.4  
V
Input voltage (OFF)  
1.2  
+30%  
2.60  
V
Input resistance  
47  
kW  
-30%  
Resistance ratio  
R1 / R2  
1.70  
2.14  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: February 2012  
Ver. CED  
1
123

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