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DMD1006 PDF预览

DMD1006

更新时间: 2024-02-16 04:16:18
品牌 Logo 应用领域
SEME-LAB 晶体晶体管射频放大器局域网
页数 文件大小 规格书
5页 91K
描述
ROHS COMPLIANT METAL GATE RF SILICON FET

DMD1006 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:D2, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.7
Is Samacsys:N外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:70 V
最大漏极电流 (ID):30 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-MDFM-F2
JESD-609代码:e4元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:METAL
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:GOLD端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

DMD1006 数据手册

 浏览型号DMD1006的Datasheet PDF文件第2页浏览型号DMD1006的Datasheet PDF文件第3页浏览型号DMD1006的Datasheet PDF文件第4页浏览型号DMD1006的Datasheet PDF文件第5页 
TetraFET  
DMD1006  
DMD1006-A  
ROHS COMPLIANT  
METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
D
2
1
E
(2 pls)  
B
C
A
150W – 28V – 175MHz  
SINGLE ENDED  
3
(
2 pls)  
G
F
K
M
H
FEATURES  
• SUITABLE FOR BROAD BAND APPLICATIONS  
• SIMPLE BIAS CIRCUITS  
• ULTRA-LOW THERMAL RESISTANCE  
• BeO FREE  
J
L
I D2  
PIN 1  
PIN 3  
SOURCE  
GATE  
PIN 2  
DRAIN  
DIM  
A
Millimetres  
19.43  
Tol.  
Inches  
0.765  
Tol.  
• LOW C  
rss  
0.13  
0.005  
B
C
9.78  
9.40  
0.13  
0.10  
0.385  
0.370  
0.005  
0.004  
• HIGH GAIN - 15 dB MINIMUM  
D
E
F
45°  
1.63R  
27.94  
5°  
0.13  
0.13  
45°  
0.064R  
1.100  
5°  
0.005  
0.005  
G
H
I
12.70  
1.57  
0.13  
0.13  
0.13  
0.13  
0.25  
0.25  
0.25  
0.500  
0.062  
1.340  
0.040  
0.785  
0.004  
0.167  
0.005  
0.005  
0.005  
0.005  
0.009  
0.002  
0.01  
APPLICATIONS  
HF/VHF/UHF COMMUNICATIONS  
from 1 MHz to 200 MHz  
34.04  
1.01  
J
K
L
19.94  
0.10  
M
4.24  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
P
Power Dissipation  
438W (219W -A Version)  
D
BV  
BV  
Drain – Source Breakdown Voltage  
Gate – Source Breakdown Voltage  
Drain Current  
70V  
±20V  
DSS  
GSS  
I
30A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
Document Number 6755  
Issue 2  
E-mail: sales@semelab.co.uk  
Website: http://www.semelab.co.uk  

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