5秒后页面跳转
DMD1009-A PDF预览

DMD1009-A

更新时间: 2024-01-04 22:57:18
品牌 Logo 应用领域
SEME-LAB 晶体晶体管射频放大器局域网
页数 文件大小 规格书
5页 85K
描述
ROHS COMPLIANT METAL GATE RF SILICON FET

DMD1009-A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, D1, 5 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.69
Is Samacsys:N外壳连接:SOURCE
配置:COMMON SOURCE, 2 ELEMENTS最小漏源击穿电压:70 V
最大漏极电流 (ID):20 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-MDFM-F4
JESD-609代码:e4元件数量:2
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:METAL
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:GOLD端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

DMD1009-A 数据手册

 浏览型号DMD1009-A的Datasheet PDF文件第2页浏览型号DMD1009-A的Datasheet PDF文件第3页浏览型号DMD1009-A的Datasheet PDF文件第4页浏览型号DMD1009-A的Datasheet PDF文件第5页 
TetraFET  
DMD1009  
DMD1009-A  
ROHS COMPLIANT  
METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
B
G
(typ)  
C
2 pls)  
(
2
5
3
4
1
P
(
2 pls)  
A
H
D
150W – 28V – 500MHz  
PUSH–PULL  
E
4 pls)  
(
F
I
FEATURES  
• SUITABLE FOR BROAD BAND APPLICATIONS  
• SIMPLE BIAS CIRCUITS  
• ULTRA-LOW THERMAL RESISTANCE  
• BeO FREE  
N
M
O
D1  
J
K
PIN 1  
PIN 3  
PIN 5  
SOURCE (COMMON)  
PIN 2  
PIN 4  
DRAIN 1  
GATE 2  
DRAIN 2  
GATE 1  
DIM Millimetres Tol.  
Inches  
0.600  
0.425  
45°  
Tol.  
• LOW Crss  
A
B
C
D
E
F
15.24  
10.80  
45°  
9.78  
8.38  
27.94  
1.52R  
10.16  
21.84  
0.10  
0.50  
0.13  
5°  
0.020  
0.005  
5°  
• HIGH GAIN – 12 dB MINIMUM  
0.13  
0.13  
0.13  
0.13  
0.15  
0.23  
0.02  
0.13  
0.13  
0.38  
0.13  
0.13  
0.385  
0.330  
1.100  
0.060R  
0.400  
0.860  
0.004  
0.077  
0.040  
0.175  
1.340  
0.064R  
0.005  
0.005  
0.005  
0.005  
0.006  
0.009  
0.001  
0.005  
0.005  
0.015  
0.005  
0.005  
G
H
I
APPLICATIONS  
VHF/UHF COMMUNICATIONS  
from 1 MHz to 500 MHz  
J
K
M
N
O
P
1.96  
1.02  
4.45  
34.04  
1.63R  
P
Power Dissipation  
648W (389W -A Version)  
D
BV  
Drain – Source Breakdown Voltage *  
Gate – Source Breakdown Voltage*  
Drain Current*  
70V  
±20V  
DSS  
GSS  
BV  
I
20A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
* Per Side  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
Document Number 6932  
E-mail: sales@semelab.co.uk  
Website: http://www.semelab.co.uk  
Issue 2  

与DMD1009-A相关器件

型号 品牌 获取价格 描述 数据表
DMD1010 SEME-LAB

获取价格

ROHS COMPLIANT METAL GATE RF SILICON FET
DMD1010 TTELEC

获取价格

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET
DMD1010-A SEME-LAB

获取价格

ROHS COMPLIANT METAL GATE RF SILICON FET
DMD1010-A TTELEC

获取价格

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET
DMD1012 SEME-LAB

获取价格

ROHS COMPLIANT METAL GATE RF SILICON FET
DMD1012 TTELEC

获取价格

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET
DMD1012-1 ETC

获取价格

Analog IC
DMD1012-A SEME-LAB

获取价格

ROHS COMPLIANT METAL GATE RF SILICON FET
DMD1012-A TTELEC

获取价格

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET
DMD1013-1 ETC

获取价格

Analog IC