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DMD1010 PDF预览

DMD1010

更新时间: 2024-11-25 09:54:03
品牌 Logo 应用领域
SEME-LAB 晶体晶体管射频放大器局域网
页数 文件大小 规格书
5页 82K
描述
ROHS COMPLIANT METAL GATE RF SILICON FET

DMD1010 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-MDFM-F4
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.67
外壳连接:SOURCE配置:COMMON SOURCE, 2 ELEMENTS
最小漏源击穿电压:70 V最大漏极电流 (ID):20 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-MDFM-F4JESD-609代码:e4
元件数量:2端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:METAL封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:GOLD
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

DMD1010 数据手册

 浏览型号DMD1010的Datasheet PDF文件第2页浏览型号DMD1010的Datasheet PDF文件第3页浏览型号DMD1010的Datasheet PDF文件第4页浏览型号DMD1010的Datasheet PDF文件第5页 
TetraFET  
DMD1010  
DMD1010-A  
ROHS COMPLIANT  
METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
B
G
(typ)  
C
2 pls)  
(
2
5
3
4
1
P
2 p  
(
l
s
)
H
D
A
125W – 28V – 500MHz  
PUSH–PULL  
E
(
4 pls)  
F
I
FEATURES  
• SUITABLE FOR BROAD BAND APPLICATIONS  
• SIMPLE BIAS CIRCUITS  
• ULTRA-LOW THERMAL RESISTANCE  
• BeO FREE  
N
M
O
J
K
D1  
PIN 1  
PIN 3  
PIN 5  
SOURCE (COMMON)  
PIN 2  
PIN 4  
DRAIN 1  
GATE 2  
DRAIN 2  
GATE 1  
DIM Millimetres Tol.  
Inches  
0.600  
0.425  
45°  
Tol.  
• LOW Crss  
A
B
C
D
E
F
15.24  
10.80  
45°  
9.78  
8.38  
27.94  
1.52R  
10.16  
21.84  
0.10  
0.50  
0.13  
5°  
0.020  
0.005  
5°  
• HIGH GAIN – 13 dB MINIMUM  
0.13  
0.13  
0.13  
0.13  
0.15  
0.23  
0.02  
0.13  
0.13  
0.38  
0.13  
0.13  
0.385  
0.330  
1.100  
0.060R  
0.400  
0.860  
0.004  
0.077  
0.040  
0.175  
1.340  
0.064R  
0.005  
0.005  
0.005  
0.005  
0.006  
0.009  
0.001  
0.005  
0.005  
0.015  
0.005  
0.005  
APPLICATIONS  
G
H
I
VHF/UHF COMMUNICATIONS  
from 1 MHz to 500 MHz  
J
K
M
N
O
P
1.96  
1.02  
4.45  
34.04  
1.63R  
P
Power Dissipation  
648W (389W -A Version)  
D
BV  
BV  
Drain – Source Breakdown Voltage *  
Gate – Source Breakdown Voltage*  
Drain Current*  
70V  
±20V  
DSS  
GSS  
I
20A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
* Per Side  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
Document Number 6678  
E-mail: sales@semelab.co.uk  
Website: http://www.semelab.co.uk  
Issue 2  

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