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DMC904F00R PDF预览

DMC904F00R

更新时间: 2024-11-25 21:11:47
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
6页 1082K
描述
RF Small Signal Bipolar Transistor, 0.015A I(C), 2-Element, Very High Frequency Band, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, SC-107C, 6 PIN

DMC904F00R 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, SC-107C, 6 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:7.77最大集电极电流 (IC):0.015 A
集电极-发射极最大电压:20 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):210最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.125 W
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):650 MHz
Base Number Matches:1

DMC904F00R 数据手册

 浏览型号DMC904F00R的Datasheet PDF文件第2页浏览型号DMC904F00R的Datasheet PDF文件第3页浏览型号DMC904F00R的Datasheet PDF文件第4页浏览型号DMC904F00R的Datasheet PDF文件第5页浏览型号DMC904F00R的Datasheet PDF文件第6页 
DMC904F0  
Silicon NPN epitaxial planar type  
For high frequency amplification  
Unit: mm  
Features  
High forward current transfer ratio hFE with excellent linearity  
High transition frequency fT  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: D3  
Basic Part Number  
DSC2G02 + DSC2001 (Individual)  
Packaging  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Collector (Tr2)  
Panasonic  
4: Emitter (Tr2)  
DMC904F00R Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)  
5: Base (Tr2)  
6: Collector (Tr1)  
SSMini6-F3-B  
SC-107C  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
JEITA  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
30  
Code  
SOT-666  
20  
V
Tr1  
(C1) (B2) (E2)  
3
V
6
5
4
15  
mA  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
VCBO  
VCEO  
VEBO  
IC  
60  
50  
Tr1  
Tr2  
V
1
2
3
Tr2 Emitter-base voltage (Collector open)  
Collector current  
7
V
(E1) (B1) (C2)  
100  
mA  
mA  
mW  
°C  
°C  
°C  
Peak collector current  
ICP  
200  
Total power dissipation  
PT  
125  
Junction temperature  
Overall  
Tj  
150  
Operating ambient temperature  
Topr  
–40 to +85  
–55 to +150  
Storage temperature  
T
stg  
Publication date: January 2014  
Ver. DED  
1

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