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DMA2610M0R PDF预览

DMA2610M0R

更新时间： 2024-11-05 20:57:47
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 643K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MO-178AA, HALOGEN FREE AND ROHS COMPLIANT, MINI5-G3-B, MO-178, SC-74A, 5 PIN

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DMA2610M0R 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：HALOGEN FREE AND ROHS COMPLIANT, MINI5-G3-B, MO-178, SC-74A, 5 PINReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：7.82其他特性：BUILT IN BIAS RESISITANCE RATIO 21.36
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JEDEC-95代码：MO-178AAJESD-30 代码：R-PDSO-G5
元件数量：2端子数量：5
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DMA2610M0R 数据手册

 浏览型号DMA2610M0R的Datasheet PDF文件第2页浏览型号DMA2610M0R的Datasheet PDF文件第3页浏览型号DMA2610M0R的Datasheet PDF文件第4页 
DMA2610M  
Silicon PNP epitaxial planar type  
For digital circuits  
Unit: mm  
Features  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
ꢀMarking Symbol: S1  
ꢀBasic Part Number  
Dual DRA2123J (Common emitter)  
1: Base (Tr1)  
2: Emitter (Common)  
3: Base (Tr2)  
Panasonic  
4: Collector (Tr2)  
Packaging  
5: Collector (Tr1)  
DMA2610M0R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Mini5-G3-B  
SC-74A  
ꢀAbsolute Maximum Ratings Ta = 25°C  
JEITA  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
Code  
MO-178  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Tr1  
Tr2  
(C1)  
5
(C2)  
4
–50  
V
–100  
mA  
mW  
°C  
Tr1  
Tr2  
R2  
Total power dissipation  
PT  
300  
R2  
Junction temperature  
Tj  
150  
R1  
R1  
1
Overall  
Operating ambient temperature  
Storage temperature  
Topr  
–40 to +85  
–55 to +150  
°C  
2
3
(B1) (E) (B2)  
T
stg  
°C  
R1  
2.2  
47  
kΩ  
kΩ  
Resistance value  
R2  
ꢀElectrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
– 0.2  
µA  
µA  
mA  
VCE = –10 V, IC = –5 mA  
80  
hFE  
(Small/Large)  
1
h
FE ratio *  
VCE = –10 V, IC = –5 mA  
0.50  
0.99  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
V
V
–1.2  
Input voltage (OFF)  
Input resistance  
VI(off) VCE = –5 V, IC = –100 µA  
– 0.4  
+30%  
0.057  
V
R1  
–30%  
0.037  
2.2  
kΩ  
Resistance ratio  
R1 / R2  
0.047  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Ratio between 2 elements  
*
Publication date: September 2013  
Ver. CED  
1
1234

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