5秒后页面跳转
DMA30401 PDF预览

DMA30401

更新时间: 2024-11-06 09:54:03
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 226K
描述
Silicon PNP epitaxial planar type

DMA30401 数据手册

 浏览型号DMA30401的Datasheet PDF文件第2页 
DMA30401  
Total pages  
page  
Tentative  
DMA30401  
Silicon PNP epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
For general amplification  
Marking Symbol : A7  
Package Code : SSSMini6-F2-B  
Internal Connection  
6
5
4
Absolute Maximum RatingsTa = 25 °C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
ICp  
PT  
Tj  
Tstg  
Rating  
-60  
-50  
-7  
-100  
Unit  
V
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Peak collector current  
Total power dissipation  
Tr 1  
Tr1  
Tr2  
Tr 2  
V
mA  
mA  
mW  
°C  
°C  
-200  
125  
150  
-55 to +150  
*1  
1
2
3
Overall  
Junction temperature  
Storage temperature  
Pin name  
Note: 1.  
1. Emitter(Tr1)  
2. Base(Tr1)  
4. Emitter(Tr2)  
5. Base(Tr2)  
*1 Measuring on substrate at 17 mm × 10 mm × 1 mm  
3. Collector(Tr2)  
6. Collector(Tr1)  
Electrical CharacteristicsTa = 25 °C ±3 °C  
Tr1, Tr2  
Parameter  
Symbol  
Conditions  
Min Typ Max  
Unit  
V
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Forward current transfer ratio  
VCBO IC = -10 μA, IE = 0  
VCEO IC = -2 mA, IB = 0  
VEBO IE = -10 μA, IC = 0  
ICBO  
ICEO  
hFE  
-60  
-50  
-7  
V
VCB = -20 V, IE = 0  
VCE = -10 V, IB = 0  
VCE = -10 V, IC = -2mA  
-0.1  
-100  
460  
μA  
μA  
-
210  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = -100 mA, IB = -10 mA  
-0.2 -0.5  
150  
V
MHz  
fT  
VCE = -10 V, IC = -2 mA  
Collector output capacitance  
(Common base, input open circuited)  
Cob  
VCB = -10 V, IE = 0, f = 1 MHz  
2
pF  
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring  
methods for transistors.  
Packing  
Embossed type (Thermo-compression sealing) R specification : 10 000 pcs / reel  
2010.3.1  
2010.9.6  
Revised  
Prepared  
Semiconductor Company, Panasonic Corporation  

与DMA30401相关器件

型号 品牌 获取价格 描述 数据表
DMA30E1800HA IXYS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 30A, 1800V V(RRM), Silicon, TO-247AD, 2 PIN
DMA30E1800HA LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 1 Element, 30A, 1800V V(RRM), Silicon, TO-247AD, 2 PIN
DMA30IM1600PZ LITTELFUSE

获取价格

分立标准二极管系列具有多种封装,击穿电压最高可达1800V。
DMA30P1200HB LITTELFUSE

获取价格

Rectifier Diode,
DMA30P1600HB LITTELFUSE

获取价格

分立标准二极管系列具有多种封装,击穿电压最高可达1800V。
DMA30P1600HR LITTELFUSE

获取价格

分立标准二极管系列具有多种封装,击穿电压最高可达1800V。
DMA364A1 PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SSSMIN
DMA364A2 PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SSSMIN
DMA364A3 PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SSSMIN
DMA364A4 PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SSSMIN