是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, DIP14,.3 | Reach Compliance Code: | unknown |
风险等级: | 5.91 | JESD-30 代码: | R-XDIP-T14 |
JESD-609代码: | e0 | 逻辑集成电路类型: | NAND GATE |
最大I(ol): | 0.016 A | 端子数量: | 14 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC | 封装代码: | DIP |
封装等效代码: | DIP14,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 电源: | 5 V |
最大电源电流(ICC): | 16.5 mA | Prop。Delay @ Nom-Sup: | 22 ns |
认证状态: | Not Qualified | 施密特触发器: | NO |
筛选级别: | 38535Q/M;38534H;883B | 子类别: | Gates |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | TTL | 温度等级: | MILITARY |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DM5410J | NSC |
获取价格 |
Triple 3-Input NAND Gates | |
DM5410J/883 | ROCHESTER |
获取价格 |
NAND Gate, TTL/H/L Series, 3-Func, 3-Input, TTL, CDIP14, CERAMIC, DIP-14 | |
DM5410J/883B | ETC |
获取价格 |
Triple 3-input NAND Gate | |
DM5410J/883C | ETC |
获取价格 |
Triple 3-input NAND Gate | |
DM5410W | NSC |
获取价格 |
Triple 3-Input NAND Gates | |
DM5410W/883 | ROCHESTER |
获取价格 |
NAND Gate, TTL/H/L Series, 3-Func, 3-Input, TTL, CDFP14, CERAMIC, FP-14 | |
DM5410W/883B | ETC |
获取价格 |
Triple 3-input NAND Gate | |
DM5410W/883C | ETC |
获取价格 |
Triple 3-input NAND Gate | |
DM5411J | ROCHESTER |
获取价格 |
AND Gate, 54 Series, 3-Func, 3-Input, TTL, CDIP14, DIP-14 | |
DM5411J/883 | ROCHESTER |
获取价格 |
AND Gate, 54 Series, 3-Func, 3-Input, TTL, CDIP14, DIP-14 |