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DG212BDQ-T1-E3 PDF预览

DG212BDQ-T1-E3

更新时间: 2024-10-28 10:03:27
品牌 Logo 应用领域
威世 - VISHAY 开关
页数 文件大小 规格书
13页 177K
描述
Improved Quad CMOS Analog Switches

DG212BDQ-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSSOP
包装说明:TSSOP, TSSOP16,.25针数:16
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:0.87模拟集成电路 - 其他类型:SPST
JESD-30 代码:R-PDSO-G16JESD-609代码:e3
长度:5 mm湿度敏感等级:1
负电源电压最大值(Vsup):-22 V负电源电压最小值(Vsup):-4.5 V
标称负供电电压 (Vsup):-15 V正常位置:NO
信道数量:1功能数量:4
端子数量:16标称断态隔离度:90 dB
通态电阻匹配规范:2 Ω最大通态电阻 (Ron):85 Ω
最高工作温度:85 °C最低工作温度:-40 °C
输出:SEPARATE OUTPUT封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:5,12/+-15 V
认证状态:Not Qualified座面最大高度:1.2 mm
子类别:Multiplexer or Switches最大供电电压 (Vsup):22 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):15 V
表面贴装:YES最长断开时间:200 ns
最长接通时间:300 ns切换:BREAK-BEFORE-MAKE
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:4.4 mm

DG212BDQ-T1-E3 数据手册

 浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第1页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第2页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第4页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第5页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第6页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第7页 
DG211B, DG212B  
Vishay Siliconix  
SPECIFICATIONS  
Test Conditions  
Unless Otherwise Specified  
V+ = 15 V, V- = - 15 V  
D Suffix  
- 40 °C to 85 °C  
Parameter  
Symbol  
VL = 5 V, VIN = 2.4 V, 0.8 Ve  
Temp.a Min.b  
Typ.c  
Max.b Unit  
Analog Switch  
Analog Signal Ranged  
VANALOG  
RDS(on)  
RDS(on)  
IS(off)  
Full  
- 15  
15  
V
Drain-Source  
On-Resistance  
Room  
Full  
85  
100  
45  
2
VD  
=
10 V, IS = 1 mA  
R
DS(on) Match  
Room  
Room  
Full  
Room  
Full  
Room  
Full  
- 0.5  
- 5  
- 0.5  
- 5  
- 0.5  
- 10  
0.5  
5
0.5  
5
0.5  
10  
Source Off Leakage Current  
Drain Off Leakage Current  
Drain On Leakage Current  
VS  
VD  
=
14 V, VD  
14 V, VS  
=
=
14 V  
14 V  
0.01  
ID(off)  
ID(on)  
=
0.01  
0.02  
nA  
VS = VD  
=
14 V  
Digital Control  
Input Voltage High  
Input Voltage Low  
Input Current  
VINH  
VINL  
Full  
Full  
2.4  
- 1  
V
0.8  
1
IINH or IINL  
CIN  
VINH or VINL  
Full  
µA  
pF  
Input Capacitance  
Dynamic Characteristics  
Turn-On Time  
Room  
5
tON  
tOFF  
Room  
Room  
Room  
Room  
Room  
Room  
Room  
Room  
300  
200  
VS = 10 V  
see figure 2  
ns  
Turn-Off Time  
Charge Injection  
Q
CL = 1000 pF, Vgen = 0 V, Rgen = 0   
1
5
pC  
Source-Off Capacitance  
Drain-Off Capacitance  
Channel-On Capacitance  
Off Isolation  
CS(off)  
CD(off)  
CD(on)  
OIRR  
XTALK  
VS = 0 V, f = 1 MHz  
5
pF  
dB  
VD = VS = 0 V, f = 1 MHz  
16  
90  
95  
CL = 15 pF, RL = 50   
S = 1 VRMS, f = 100 kHz  
V
Channel-to-Channel Crosstalk  
Power Supply  
Room  
Full  
Room  
Full  
Room  
Full  
10  
50  
Positive Supply Current  
Negative Supply Current  
Logic Supply Current  
I+  
I-  
V
IN = 0 or 5 V  
- 10  
- 50  
µA  
V
10  
50  
IL  
Power Supply Range for  
Continuous Operation  
VOP  
Full  
4.5  
22  
Document Number: 70040  
S11-0179-Rev. J, 07-Feb-11  
www.vishay.com  
3

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