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DG212BDQ-T1-E3 PDF预览

DG212BDQ-T1-E3

更新时间: 2024-10-28 10:03:27
品牌 Logo 应用领域
威世 - VISHAY 开关
页数 文件大小 规格书
13页 177K
描述
Improved Quad CMOS Analog Switches

DG212BDQ-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSSOP
包装说明:TSSOP, TSSOP16,.25针数:16
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:0.87模拟集成电路 - 其他类型:SPST
JESD-30 代码:R-PDSO-G16JESD-609代码:e3
长度:5 mm湿度敏感等级:1
负电源电压最大值(Vsup):-22 V负电源电压最小值(Vsup):-4.5 V
标称负供电电压 (Vsup):-15 V正常位置:NO
信道数量:1功能数量:4
端子数量:16标称断态隔离度:90 dB
通态电阻匹配规范:2 Ω最大通态电阻 (Ron):85 Ω
最高工作温度:85 °C最低工作温度:-40 °C
输出:SEPARATE OUTPUT封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:5,12/+-15 V
认证状态:Not Qualified座面最大高度:1.2 mm
子类别:Multiplexer or Switches最大供电电压 (Vsup):22 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):15 V
表面贴装:YES最长断开时间:200 ns
最长接通时间:300 ns切换:BREAK-BEFORE-MAKE
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:4.4 mm

DG212BDQ-T1-E3 数据手册

 浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第1页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第3页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第4页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第5页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第6页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第7页 
DG211B, DG212B  
Vishay Siliconix  
ORDERING INFORMATION  
Temp. Range  
Package  
Standard Part Number  
Lead (Pb)-free Part Number  
DG211BDJ  
DG212BDJ  
DG211BDJ-E3  
DG212BDJ-E3  
16-Pin Plastic DIP  
DG211BDY  
DG211BDY-E3  
DG211BDY-T1  
DG211BDY-T1-E3  
16-Pin Narrow SOIC  
DG212BDY  
DG212BDY-E3  
- 40 °C to 85 °C  
DG212BDY-T1  
DG212BDY-T1-E3  
DG211BDQ  
DG211BDQ-E3  
DG211BDQ-T1  
DG211BDQ-T1-E3  
16-Pin TSSOP  
DG212BDQ  
DG212BDQ-E3  
DG212BDQ-T1  
DG212BDQ-T1-E3  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Limit  
44  
Unit  
Voltages Referenced, V+ to V-  
GND  
25  
V
(V-) - 2 to (V+) + 2  
or 30 mA, whichever occurs first  
Digital Inputsa, VS, VD  
Current (Any terminal)  
30  
100  
mA  
°C  
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.)  
Storage Temperature  
- 65 to 125  
470  
16-Pin Plastic DIPc  
16-Pin Narrow SOIC and TSSOPd  
Power Dissipation (Package)b  
mW  
640  
Notes:  
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.  
b. All leads welded or soldered to PC board.  
c. Derate 6.5 mW/°C above 75 °C.  
d. Derate 7.6 mW/°C above 75 °C.  
SCHEMATIC DIAGRAM (Typical Channel)  
V+  
S
X
V
L
Level  
Shift/  
Drive  
V-  
V+  
IN  
X
D
X
GND  
V-  
Figure 1.  
www.vishay.com  
2
Document Number: 70040  
S11-0179-Rev. J, 07-Feb-11  

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