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DG212BDQ-T1-E3 PDF预览

DG212BDQ-T1-E3

更新时间: 2024-10-28 10:03:27
品牌 Logo 应用领域
威世 - VISHAY 开关
页数 文件大小 规格书
13页 177K
描述
Improved Quad CMOS Analog Switches

DG212BDQ-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSSOP
包装说明:TSSOP, TSSOP16,.25针数:16
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:0.87模拟集成电路 - 其他类型:SPST
JESD-30 代码:R-PDSO-G16JESD-609代码:e3
长度:5 mm湿度敏感等级:1
负电源电压最大值(Vsup):-22 V负电源电压最小值(Vsup):-4.5 V
标称负供电电压 (Vsup):-15 V正常位置:NO
信道数量:1功能数量:4
端子数量:16标称断态隔离度:90 dB
通态电阻匹配规范:2 Ω最大通态电阻 (Ron):85 Ω
最高工作温度:85 °C最低工作温度:-40 °C
输出:SEPARATE OUTPUT封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:5,12/+-15 V
认证状态:Not Qualified座面最大高度:1.2 mm
子类别:Multiplexer or Switches最大供电电压 (Vsup):22 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):15 V
表面贴装:YES最长断开时间:200 ns
最长接通时间:300 ns切换:BREAK-BEFORE-MAKE
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:4.4 mm

DG212BDQ-T1-E3 数据手册

 浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第4页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第5页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第6页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第8页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第9页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第10页 
DG211B, DG212B  
Vishay Siliconix  
APPLICATIONS  
+ 5 V  
+ 15 V  
V
L
V+  
Logic Input  
Low = Sample  
High = Hold  
1 kΩ  
+ 15 V  
DG211B  
+ 15 V  
- 15 V  
-
J202  
LM101A  
2N4400  
V
IN  
+
5 MΩ  
5.1 MΩ  
50 pF  
200 W  
V
OUT  
1000 pF  
J507  
V-  
J500  
30 pF  
- 15 V  
Aquisition Time  
Aperature Time  
Sample to Hold Offset  
Droop Rate  
= 25 µs  
= 1 µs  
= 5 mV  
= 5 mV/s  
- 15 V  
Figure 6. Sample-and-Hold  
+ 15 V  
160  
V
1
C
4
150 pF  
f
120  
80  
C4  
Select  
C
3
1500 pF  
f
C3  
Select  
C
2
TTL  
Control  
0.015 µF  
f
C1  
f
C2  
f
C3  
f
C4  
f
C2  
40  
Select  
C
1
0.15 µF  
f
C1  
f
L1  
f
L2  
f
L3  
f
L4  
Select  
0
DG211B  
V-  
GND  
- 40  
1
10  
100  
1K  
10K  
100K  
1M  
- 15 V  
Frequency - Hz  
R
3
= 1 MΩ  
+ 15 V  
R
R
3
A
(Voltage Gain Below Break Frequency) =  
1
= 100 (40 dB)  
L
- 15 V  
-
1
V
OUT  
f
(Break Frequency) =  
C
R
1
= 10 kΩ  
LM101A  
2πR C  
3
X
1
+
f
L
(Unity Gain Frequency) =  
2πR C  
1
X
R
DS(on)  
R
2
= 10 kΩ  
- 47 dB  
Max. Attenuation =  
30 pF  
10 kΩ  
Figure 7. Active Low Pass Filter with Digitally Selected Break Frequency  
Document Number: 70040  
S11-0179-Rev. J, 07-Feb-11  
www.vishay.com  
7

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