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DG212BDQ-T1-E3 PDF预览

DG212BDQ-T1-E3

更新时间: 2024-10-28 10:03:27
品牌 Logo 应用领域
威世 - VISHAY 开关
页数 文件大小 规格书
13页 177K
描述
Improved Quad CMOS Analog Switches

DG212BDQ-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSSOP
包装说明:TSSOP, TSSOP16,.25针数:16
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:0.87模拟集成电路 - 其他类型:SPST
JESD-30 代码:R-PDSO-G16JESD-609代码:e3
长度:5 mm湿度敏感等级:1
负电源电压最大值(Vsup):-22 V负电源电压最小值(Vsup):-4.5 V
标称负供电电压 (Vsup):-15 V正常位置:NO
信道数量:1功能数量:4
端子数量:16标称断态隔离度:90 dB
通态电阻匹配规范:2 Ω最大通态电阻 (Ron):85 Ω
最高工作温度:85 °C最低工作温度:-40 °C
输出:SEPARATE OUTPUT封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:5,12/+-15 V
认证状态:Not Qualified座面最大高度:1.2 mm
子类别:Multiplexer or Switches最大供电电压 (Vsup):22 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):15 V
表面贴装:YES最长断开时间:200 ns
最长接通时间:300 ns切换:BREAK-BEFORE-MAKE
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:4.4 mm

DG212BDQ-T1-E3 数据手册

 浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第3页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第4页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第5页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第7页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第8页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第9页 
DG211B, DG212B  
Vishay Siliconix  
TEST CIRCUITS  
+ 15 V  
3 V  
0 V  
V+  
Logic  
Input  
t < 20 ns  
t < 20 ns  
f
50 %  
r
S
D
V
S
= + 2 V  
3 V  
V
O
t
IN  
GND  
OFF  
C
35 pF  
R
1 kΩ  
L
L
V-  
90 %  
Switch  
Output  
V
O
t
- 15 V  
= V  
ON  
R
L
V
O
S
R
L
+ r  
DS(on)  
Figure 2. Switching Time  
+ 15 V  
V+  
C
+ 15 V  
C
V+  
S
D
D
V
S
1
1
V
O
S
D
V
S
R
g
= 50 Ω  
50 Ω  
R
g
= 50 Ω  
IN  
1
R
L
0 V, 2.4 V  
NC  
IN  
0V, 2.4 V  
V
O
S
2
2
GND  
V-  
C
R
L
IN  
2
0 V, 2.4 V  
- 15 V  
GND  
V-  
C
C = RF bypass  
Isolation = 20 log  
V
S
V
Off Isolation = 20 log  
S
X
V
O
TALK  
V
O
- 15 V  
Figure 3. Off Isolation  
Figure 4. Channel-to-Channel Crosstalk  
+ 15 V  
V+  
ΔV  
O
V
O
R
g
S
D
V
O
IN  
V
g
C
ON  
OFF  
ON  
IN  
X
L
3 V  
1000 pF  
V-  
GND  
ΔV = measured voltage error due to charge injection  
O
The charge injection in coulombs is Q = C x ΔV  
L
O
- 15 V  
Figure 5. Charge Injection  
www.vishay.com  
6
Document Number: 70040  
S11-0179-Rev. J, 07-Feb-11  

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