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DG212BDQ-T1-E3 PDF预览

DG212BDQ-T1-E3

更新时间: 2024-11-30 10:03:27
品牌 Logo 应用领域
威世 - VISHAY 开关
页数 文件大小 规格书
13页 177K
描述
Improved Quad CMOS Analog Switches

DG212BDQ-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSSOP
包装说明:TSSOP, TSSOP16,.25针数:16
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:0.87模拟集成电路 - 其他类型:SPST
JESD-30 代码:R-PDSO-G16JESD-609代码:e3
长度:5 mm湿度敏感等级:1
负电源电压最大值(Vsup):-22 V负电源电压最小值(Vsup):-4.5 V
标称负供电电压 (Vsup):-15 V正常位置:NO
信道数量:1功能数量:4
端子数量:16标称断态隔离度:90 dB
通态电阻匹配规范:2 Ω最大通态电阻 (Ron):85 Ω
最高工作温度:85 °C最低工作温度:-40 °C
输出:SEPARATE OUTPUT封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:5,12/+-15 V
认证状态:Not Qualified座面最大高度:1.2 mm
子类别:Multiplexer or Switches最大供电电压 (Vsup):22 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):15 V
表面贴装:YES最长断开时间:200 ns
最长接通时间:300 ns切换:BREAK-BEFORE-MAKE
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:4.4 mm

DG212BDQ-T1-E3 数据手册

 浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第2页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第3页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第4页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第5页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第6页浏览型号DG212BDQ-T1-E3的Datasheet PDF文件第7页 
DG211B, DG212B  
Vishay Siliconix  
Improved Quad CMOS Analog Switches  
DESCRIPTION  
FEATURES  
22 V supply voltage rating  
The DG211B, DG212B analog switches are highly improved  
versions of the industry-standard DG211, DG212. These  
devices are fabricated in Vishay Siliconix’ proprietary silicon  
gate CMOS process, resulting in lower on-resistance, lower  
leakage, higher speed, and lower power consumption.  
TTL and CMOS compatible logic  
Low on-resistance - RDS(on): 50  
Low leakage - ID(on): 20 pA  
Single supply operation possible  
Extended temperature range  
Fast switching - tON: 120 ns  
These quad single-pole single-throw switches are designed  
for a wide variety of applications in telecommunications,  
instrumentation, process control, computer peripherals, etc.  
An improved charge injection compensation design  
minimizes switching transients. The DG211B and DG212B  
can handle up to 22 V, and have an improved continuous  
current rating of 30 mA. An epitaxial layer prevents latchup.  
Low charge injection - Q: 1 pC  
BENEFITS  
Wide analog signal range  
Simple logic interface  
Higher accuracy  
All devices feature true bi-directional performance in the on  
condition, and will block signals to the supply levels in the off  
condition.  
Minimum transients  
Reduced power consumption  
Superior to DG211, DG212  
The DG211B is a normally closed switch and the DG212B is  
a normally open switch. (see Truth Table.)  
Space savings (TSSOP)  
APPLICATIONS  
Industrial instrumentation  
Test equipment  
Communications systems  
Disk drives  
Computer peripherals  
Portable instruments  
Sample-and-hold circuits  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
DG211B  
Dual-In-Line, SOIC and TSSOP  
IN  
D
IN  
2
1
1
1
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
TRUTH TABLE  
D
S
2
Logic  
DG211B  
ON  
DG212B  
OFF  
S
0
1
2
OFF  
ON  
V-  
V+  
Logic “0” 0.8 V  
Logic “1” 2.4 V  
GND  
V
L
S
3
S
D
4
4
4
D
3
IN  
IN  
3
Top View  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 70040  
S11-0179-Rev. J, 07-Feb-11  
www.vishay.com  
1

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