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DF5A5.6LJE(TPL3,F) PDF预览

DF5A5.6LJE(TPL3,F)

更新时间: 2024-11-09 15:30:51
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 81K
描述
DF5A5.6LJE(TPL3,F)

DF5A5.6LJE(TPL3,F) 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.8
Base Number Matches:1

DF5A5.6LJE(TPL3,F) 数据手册

 浏览型号DF5A5.6LJE(TPL3,F)的Datasheet PDF文件第2页浏览型号DF5A5.6LJE(TPL3,F)的Datasheet PDF文件第3页 
DF5A5.6LJE  
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type  
DF5A5.6LJE  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD).  
Unit: mm  
* This product is for protection against electrostatic discharge (ESD)  
only and is not intended for any other usage, including without  
limitation, the constant voltage diode application.  
The mounting of four devices on an ultra-compact package allows the  
number of parts and the mounting cost to be reduced.  
Low terminal capacitance: C = 8.0 pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Power dissipation  
Symbol  
P
Rating  
Unit  
1.CATHODE1  
2.ANODE  
3.CATHODE2  
4.CATHODE3  
5.CATHODE4  
100  
150  
mW  
°C  
Junction temperature  
T
j
Storage temperature range  
T
stg  
50~150  
°C  
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
1-2W1A  
Weight: 0.003 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Zener voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
I
= 5 mA  
= 5 mA  
5.3  
5.6  
6.0  
50  
V
Ω
Z
Z
Z
Dynamic impedance  
Reverse current  
Z
Z
I
V
V
= 3.5 V  
1.0  
μA  
R
R
R
Terminal capacitance  
(between Cathode and Anode)  
C
T
= 0 V, f = 1 MHz  
8.0  
pF  
Guaranteed Level of ESD Immunity  
Test Condition  
ESD Immunity Level  
IEC61000-4-2  
(Contact discharge)  
± 8 kV  
Criterion: No damage to device elements  
1
2007-11-01  

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