DF5A6.2CJE
TOSHIBA Diodes for Protecting against ESD
DF5A6.2CJE
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
z Low terminal capacitance: C = 25 pF (typ.)
T
Absolute Maximum Ratings (Ta = 25°C)
1.CATHODE 1
Characteristic
Power dissipation
Symbol
P
Rating
Unit
2. ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
100
150
mW
°C
Junction temperature
T
j
Storage temperature range
T
stg
−55 to 150
°C
JEDEC
JEITA
⎯
⎯
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
1-2W1A
Weight: 0.003 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V
Z
I
I
= 5 mA
= 5 mA
5.8
―
6.2
―
6.6
30
V
Ω
Z
Z
Z
Dynamic impedance
Reverse current
Z
I
V
V
= 5 V
―
―
2.5
μA
R
R
R
Terminal capacitance
(between Cathode and Anode)
C
T
= 0 V, f = 1 MHz
⎯
25
⎯
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
± 30 kV
Criterion: No damage to device elements
Start of commercial production
2003-07
1
2014-03-01