DF5A6.8CJE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A6.8CJE
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
Unit: mm
* This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
z The mounting of four devices on an ultra-compact package allows
the number of parts and the mounting cost to be reduced.
z Low Terminal capacitance (between Cathode and Anode)
: CT =23pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
1.CATHODE 1
2. ANODE
Characteristic
Power dissipation
Symbol
P
Rating
Unit
3.CATHODE2
4.CATHODE3
5.CATHODE4
100
150
mW
°C
Junction temperature
T
j
Storage temperature range
T
−55~150
°C
stg
JEDEC
JEITA
⎯
⎯
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
TOSHIBA
1-2W1A
Weight: 0.003 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V
Z
I
I
= 5 mA
= 5 mA
6.4
―
6.8
―
7.2
25
V
Ω
Z
Z
Z
Dynamic impedance
Reverse current
Z
I
V
V
= 5 V
―
―
0.5
μA
R
R
R
Terminal capacitance
(between Cathode and Anode)
C
T
= 0 V, f = 1 MHz
⎯
23
⎯
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
± 25 kV
Criterion: No damage to device elements
1
2007-11-01