Datasheet > DF5A6.8F_07

DF5A6.8F_07

更新时间： 2024-09-23 03:29:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
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3页	183K
描述
Product for Use Only as Protection against Electrostatic Discharge (ESD)

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DF5A6.8F_07 数据手册

DF5A6.8F

TOSHIBA Diodes for Protecting against ESD

DF5A6.8F

Product for Use Only as Protection against Electrostatic

Discharge (ESD)

Unit: mm

* This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

The mounting of four devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Power dissipation

Symbol

Rating

Unit

200

125

°C

1.CATHODE 1

2. ANODE

Junction temperature

3.CATHODE2

4.CATHODE3

5.CATHODE4

Storage temperature range

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

JEDEC

JEITA

⎯

TOSHIBA

1-3H1A

Weight: 0.014 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristic

Zener voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 5 mA

= 0.5 mA

6.4

―

6.8

―

7.2

Ω

Dynamic impedance

Knee dynamic impedance

Reverse current

―

Ω

= 5 V

0.5

μA

Terminal capacitance

(between Cathode and Anode)

= 0, f = 1 MHz

―

Guaranteed Level of ESD Immunity

Test Condition

ESD Immunity Level

IEC61000-4-2

(Contact discharge)

± 30kV

Criterion: No damage to device elements

2007-11-21

12 3

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