Datasheet > DF5A68FU

DF5A68FU

更新时间： 2024-02-09 17:44:23

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
3页	159K
描述
DIODES FOR PROTECTING AGAINST ESD

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中文翻译

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DF5A68FU 数据手册

DF5A6.8FU

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF5A6.8FU

Diodes for Protecting against ESD

Unit: mm

ꢀ

The mounting of two devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

The zener voltage corresponds to the E24 Series.

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Power dissipation

200

125

°C

Junction temperature

Storage temperature range

stg

−55~125

°C

―

JEDEC

JEITA

1-2V1B

TOSHIBA

Electrical Characteristics (Ta = 25°C)

Weight: 0.0062 g (typ.)

Characteristic

Zener voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 5 mA

= 0.5 mA

6.4

―

6.8

―

7.2

Ω

Dynamic impedance

Knee dynamic impedance

Reverse current

―

Ω

= 5 V

0.5

µA

Terminal capacitance

(between Cathode and Anode)

= 0, f = 1 MHz

―

Guaranteed Level of ESD Immunity

Test Condition

ESD Immunity Level

±30kV

IEC61000-4-2

(Contact discharge)

Criterion: No damage to device elements

Marking

Equivalent Circuit

(Top View)

2004-11-08

12 3

中文翻译

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