DF5A6.8CJE

更新时间： 2024-09-23 03:29:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	167K
描述
Product for Use Only as Protection against Electrostatic Discharge (ESD)

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DF5A6.8CJE 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	SOD	包装说明：	R-PDSO-F5
针数：	5	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.52	配置：	COMMON ANODE, 4 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
最大动态阻抗：	25 Ω	JESD-30 代码：	R-PDSO-F5
元件数量：	4	端子数量：	5
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	0.1 W	认证状态：	Not Qualified
标称参考电压：	6.8 V	子类别：	Voltage Reference Diodes
表面贴装：	YES	技术：	ZENER
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	最大电压容差：	5.88%
工作测试电流：	5 mA	Base Number Matches：	1

DF5A6.8CJE 数据手册

DF5A6.8CJE

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF5A6.8CJE

Product for Use Only as Protection against Electrostatic

Discharge (ESD)

Unit: mm

* This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

z The mounting of four devices on an ultra-compact package allows

the number of parts and the mounting cost to be reduced.

z Low Terminal capacitance (between Cathode and Anode)

: C_T=23pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

1.CATHODE 1

2. ANODE

Characteristic

Power dissipation

Symbol

Rating

Unit

3.CATHODE2

4.CATHODE3

5.CATHODE4

100

150

°C

Junction temperature

Storage temperature range

−55~150

°C

stg

JEDEC

JEITA

⎯

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

TOSHIBA

1-2W1A

Weight: 0.003 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristic

Zener voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 5 mA

6.4

―

6.8

―

7.2

Dynamic impedance

Reverse current

= 5 V

―

0.5

μA

Terminal capacitance

(between Cathode and Anode)

= 0 V, f = 1 MHz

⎯

Guaranteed Level of ESD Immunity

Test Condition

ESD Immunity Level

IEC61000-4-2

(Contact discharge)

± 25 kV

Criterion: No damage to device elements

2007-11-01

12 3

中文翻译

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与DF5A6.8CJE相关器件

型号	品牌	获取价格	描述	数据表
DF5A6.8CJE(TE85L)	TOSHIBA	获取价格	ZENER DIODE,QUAD, FIVE TERMINAL, COMMON ANODE,6.8V V(Z),5.9%,SOT-353VAR
DF5A6.8CJE(TE85L,F)	TOSHIBA	获取价格	ZENER DIODE,QUAD, FIVE TERMINAL, COMMON ANODE,6.8V V(Z),5.9%,SOT-353VAR
DF5A6.8CJE(TPL3,F)	TOSHIBA	获取价格	ZENER DIODE,QUAD, FIVE TERMINAL, COMMON ANODE,6.8V V(Z),5.9%,SOT-353VAR
DF5A6.8CJE,LM	TOSHIBA	获取价格	Zener Diode
DF5A6.8F	TOSHIBA	获取价格	TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A6.8F_07	TOSHIBA	获取价格	Product for Use Only as Protection against Electrostatic Discharge (ESD)
DF5A6.8FU	TOSHIBA	获取价格	Product for Use Only as Protection against Electrostatic Discharge (ESD)
DF5A6.8FU(T5L,F,T)	TOSHIBA	获取价格	Diode Zener Quad Common Anode 6.8V 6% 200mW 5-Pin USV T/R
DF5A6.8FU(T5LFT)	TOSHIBA	获取价格	Zener Diode
DF5A6.8JE	TOSHIBA	获取价格	Product for Use Only as Protection against Electrostatic Discharge (ESD)

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