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DF10S-E3 PDF预览

DF10S-E3

更新时间： 2024-11-05 12:31:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 85K
描述
Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers

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DF10S-E3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：R-PDSO-G4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.01其他特性：UL RECOGNIZED
配置：BRIDGE, 4 ELEMENTS二极管元件材料：SILICON
二极管类型：BRIDGE RECTIFIER DIODE最大正向电压 (VF)：1.1 V
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：50 A
元件数量：4相数：1
端子数量：4最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：1000 V
子类别：Bridge Rectifier Diodes表面贴装：YES
端子面层：MATTE TIN端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

DF10S-E3 数据手册

 浏览型号DF10S-E3的Datasheet PDF文件第2页浏览型号DF10S-E3的Datasheet PDF文件第3页浏览型号DF10S-E3的Datasheet PDF文件第4页 
DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S  
www.vishay.com  
Vishay General Semiconductor  
Miniature Glass Passivated Single-Phase  
Surface Mount Bridge Rectifiers  
FEATURES  
• UL recognition, file number E54214  
• Ideal for automated placement  
• High surge current capability  
~
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
~
• Material categorization: For definitions of  
compliance please see www.vishay.com/doc?99912  
~
~
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
for SMPS, lighting ballaster, adapter, battery charger, home  
appliances, office equipment, and telecommunication  
applications.  
Case Style DFS  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
Package  
DFS  
1 A  
Case: DFS  
IF(AV)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
IFSM  
IR  
50 A  
5 μA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 1.0 A  
TJ max.  
1.1 V  
150 °C  
Quad  
Polarity: As marked on body  
Diode variations  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT  
Device marking code  
DF005S DF01S DF02S DF04S DF06S DF08S DF10S  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward output rectified current  
at TA = 40 °C (1)  
IF(AV)  
1.0  
50  
A
Peak forward surge current single half sine-wave  
superimposed on rated load  
IFSM  
A
Rating for fusing (t < 8.3 ms)  
I2t  
10  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Note  
(1)  
Units mounted on PCB with 0.51" x 0.51" (13 mm x 13 mm) copper pads  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT  
Maximum instantaneous forward  
voltage drop per diode  
1.0 A  
VF  
IR  
1.1  
V
TA = 25 °C  
5.0  
Maximum DC reverse current at  
rated DC blocking voltage per diode  
μA  
pF  
TA = 125 °C  
500  
Typical junction capacitance per  
diode (1)  
CJ  
25  
Note  
(1)  
Measured at 1.0 MHz and applied reverse voltage of 4.0 V  
Revision: 19-Aug-13  
Document Number: 88573  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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