DF10S-T3

更新时间： 2024-11-17 23:16:31

品牌	Logo	应用领域
WTE		整流二极管桥式整流二极管光电二极管
页数	文件大小	规格书
3页	59K
描述
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DF10S-T3 数据手册

WTE

POWER SEMICONDUCTORS

DF005S – DF10S

1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

Low Forward Voltage Drop

High Current Capability

High Surge Current Capability

Designed for Surface Mount Application

Plastic Material – UL Recognition Flammability

Classification 94V-O

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ L

DF-S

Min

Dim

Max

7.90

6.50

0.25

0.33

10.40

1.53

8.51

3.40

5.20

1.20

Mechanical Data

7.40

6.20

0.009

0.076

—

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Case

Weight: 0.38 grams (approx.)

Mounting Position: Any

1.02

8.13

3.20

5.0

*Low profile models (J = 2.20~2.50mm) are available.

Please consult factory.

Marking: Type Number

1.00

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

005S

01S

02S

04S

06S

08S

10S

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

1.0

Average Rectified Output Current

@T_A= 40°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

FSM

Forward Voltage per element

@I_F= 1.0A

V^FM

I^RM

1.1

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

500

µA

Typical Junction Capacitance per element (Note 1)

Typical Thermal Resistance (Note 2)

C^j

110

K/W

°C

R^ꢀ^JA

Operating and Storage Temperature Range

T^j, T^STG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to ambient mounted on PC board with 5.0mm²(0.03mm thick) land areas.

DF005S – DF10S

1 of 3

12 3

中文翻译

下载PDF

与DF10S-T3相关器件

型号	品牌	获取价格	描述	数据表
DF10S-T-F	DIODES	获取价格	Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DF-S,
DF10ST-G	COMCHIP	获取价格	SMD Glass Passivated Bridge Rectifiers
DF10ST-HF	COMCHIP	获取价格	SMD Glass Passivated Bridge Rectifiers
DF10STR16	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, SURFACE MOUNT, DIP-4
DF10STRR16	INFINEON	获取价格	Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, SURFACE MOUNT PACKAGE-4
DF11	SCHURTER	获取价格	IEC Appliance Inlet C14 with recessed Circuit Breaker TA45
DF11.A026F150C0.0010.01	SCHURTER	获取价格	Mains Power Connector, 15A, 250VAC, Male, Solder Terminal, ROHS COMPLIANT
DF11.A026F150C0.0010.02	SCHURTER	获取价格	Mains Power Connector, 15A, 250VAC, Male, Solder Terminal, ROHS COMPLIANT
DF11.A026F150C0.0011.01	SCHURTER	获取价格	Mains Power Connector, 15A, 250VAC, Male, Solder Terminal, ROHS COMPLIANT
DF11.A026F150C0.0012.01	SCHURTER	获取价格	Mains Power Connector, 15A, 250VAC, Male, Solder Terminal, ROHS COMPLIANT

与DF10S-T3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

DF10S-T3

DF10S-T3 数据手册

与DF10S-T3相关器件

与DF10S-T3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DF10S-T3

DF10S-T3 数据手册

与DF10S-T3相关器件

与DF10S-T3相关文章

您还可以找

您在本页遇到什么问题？