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DF10S-T-F

更新时间： 2024-09-20 19:43:15
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
3页 84K
描述
Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DF-S, 4 PIN

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DF10S-T-F 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：R-PDSO-G4针数：4
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5
其他特性：UL RECOGNIZED最小击穿电压：1000 V
配置：BRIDGE, 4 ELEMENTS二极管元件材料：SILICON
二极管类型：BRIDGE RECTIFIER DIODEJESD-30 代码：R-PDSO-G4
JESD-609代码：e3最大非重复峰值正向电流：50 A
元件数量：4相数：1
端子数量：4最高工作温度：150 °C
最低工作温度：-65 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：1000 V
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

DF10S-T-F 数据手册

 浏览型号DF10S-T-F的Datasheet PDF文件第2页浏览型号DF10S-T-F的Datasheet PDF文件第3页 
SPICE MODELS: DF005S DF01S DF02S DF04S DF06S DF08S DF10S  
DF005S - DF10S  
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE  
RECTIFIER  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
Diffused Junction  
Low Forward Voltage Drop, High Current Capability  
Surge Overload Rating to 50A Peak  
DF-S  
Min  
Dim  
A
Max  
7.90  
6.50  
0.30  
0.33  
10.40  
1.53  
8.51  
2.60  
5.20  
1.20  
Designed for Surface Mount Application  
7.40  
6.20  
0.22  
0.076  
—
L
G
UL Listed Under Recognized Component Index, File  
Number E94661  
B
C
·
Lead Free Finish, RoHS Compliant (Note 3)  
D
A B  
D E  
E
Mechanical Data  
·
G
H
1.02  
8.13  
2.40  
5.00  
1.00  
Case: DF-S  
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
H
C
J
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
J
K
Terminals: Finish - Matte Tin. Solderable per  
MIL-STD-202, Method 208  
L
K
All Dimensions in mm  
·
·
·
Polarity: As marked on Case  
Marking: Type Number, See Page 3  
Weight: 0.38 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
DF  
DF  
DF  
DF  
DF  
DF  
DF  
Characteristic  
Symbol  
Unit  
005S  
01S  
100  
70  
02S  
04S  
06S  
08S  
10S  
VRMM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VRMS  
IO  
RMS Reverse Voltage  
35  
280  
1.0  
V
A
Average Forward Rectified Current  
@ TA = 40°C  
Non-Repetitive Peak Forward Surge Current, 8.3 ms  
single half-sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
50  
A
Forward Voltage (per element)  
@ IF = 1.0A  
VFM  
IRM  
1.1  
V
Peak Reverse Current at Rated  
DC Blocking Voltage (per element)  
@ TA 25°C  
=
10  
500  
µA  
@ TA = 125°C  
I2t Rating for Fusing (t<8.3ms)  
I2t  
10.4  
25  
A2s  
pF  
CT  
Typical Total Capacitance (per element) (Note 1)  
Typical Thermal Resistance, Junction to Ambient  
(Note 2)  
RqJA  
40  
°C/W  
°C  
Tj, TSTG  
Operating and Storage Temperature Range  
-65 to +150  
Notes: 1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.  
2. Thermal resistance, junction to ambient, measured on PC board with 5.0mm (0.03mm thick) land areas.  
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
2
DS17001 Rev. 10 - 2  
1 of 3  
DF005S-DF10S  
www.diodes.com  
ã Diodes Incorporated  
123

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