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DF10ST-G PDF预览

DF10ST-G

更新时间: 2024-11-18 12:54:27
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管桥式整流二极管光电二极管
页数 文件大小 规格书
4页 102K
描述
SMD Glass Passivated Bridge Rectifiers

DF10ST-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.68Is Samacsys:N
其他特性:UL RECOGNIZED最小击穿电压:1000 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:R-PDSO-G4湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:1000 V
子类别:Bridge Rectifier Diodes表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DF10ST-G 数据手册

 浏览型号DF10ST-G的Datasheet PDF文件第2页浏览型号DF10ST-G的Datasheet PDF文件第3页浏览型号DF10ST-G的Datasheet PDF文件第4页 
SMD Glass Passivated Bridge Rectifiers  
DF005S-G Thru. DF10S-G  
Reverse Voltage: 50 to 1000V  
Forward Current: 1.0A  
RoHS Device  
Features  
DFS  
-Rating to 1000V PRV  
0.205(5.2)  
0.197(5.0)  
-Ideal for printed circuit board  
0.335(8.50)  
0.307(7.80)  
-Low forward voltage drop,high current capability  
-Reliable low cost construction utilizing molded plastic  
technique results in inexpensive product  
-Lead tin Pb/Sn copper  
-
+
0.031(0.8)  
0.023(0.6)  
0.256(6.5)  
0.244(6.2)  
~
~
0.406(10.3)  
0.394(10.0)  
0.047(1.20)  
0.037(0.95)  
0.014(0.35)  
0.008(0.20)  
-The plastic material has UL flammability  
classification 94V-0  
0.323(8.2)  
0.315(8.0)  
Mechanical Data  
-Polarit:As marked on Body  
0.102(2.6)  
0.089(2.2)  
0.063(1.6)  
0.055(1.4)  
-Weight: 0.34 grams  
Dimensions in inches and (millimeter)  
-Mounting position:Any  
Maximum ratings and electrical characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol  
DF005S-G DF01S-G DF02S-G DF04S-G DF06S-G DF08S-G DF10S-G  
Parameter  
Unit  
Maximum Reverse Peak Repetitive Voltage  
Maximum RMS Voltage  
V
RRM  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
V
RMS  
Maximum DC Blocking Voltage  
V
DC  
100  
1000  
Maximum Average Forward  
I
(AV)  
1.0  
30  
A
A
Rectified Current @T =40°C  
A
Peak Forward Surage Current ,  
8.3ms Single Half Sine-Wave  
Super Imposed On Rated Load  
IFSM  
I2 t Rating for Fusing (t8.3ms)  
I 2 t  
10.4  
1.1  
A2 s  
V
Maximum Forward Voltage at 1.0A DC  
VF  
Maximum Reverse Current  
@T  
J
=25°C  
=125°C  
10  
500  
μA  
IR  
At Rated DC Blocking Voltage @T  
J
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
Operating Temperature Range  
Storage Temperature Range  
Notes:  
C
J
25  
pF  
°C/W  
°C  
R
θJA  
40  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V.  
2. Unit mounted on P.C.B with 0.51"×0.51" (13×13mm) copper pads.  
REV: E  
Page 1  
QW-BBR03  
Comchip Technology CO., LTD.  

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