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DD200KB PDF预览

DD200KB

更新时间: 2024-01-26 00:24:51
品牌 Logo 应用领域
SANREX 二极管
页数 文件大小 规格书
2页 95K
描述
DIODE MODULE

DD200KB 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:O-MXSS-X1
针数:1Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.92应用:GENERAL PURPOSE
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:O-MXSS-X1
湿度敏感等级:1最大非重复峰值正向电流:400 A
元件数量:1相数:1
端子数量:1最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:20 A
封装主体材料:METAL封装形状:ROUND
封装形式:SPECIAL SHAPE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:50 V
子类别:Rectifier Diodes表面贴装:NO
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED

DD200KB 数据手册

 浏览型号DD200KB的Datasheet PDF文件第2页 
DIODE MODULE  
DD200KB  
UL;E76102M)  
Power Diode Module DD200KB Series are designed for various rectifier circuits.  
DD200KB has two diode chips connected in series and the mounting base is electrically  
isolated from elements for simple heatsink construction. Wide voltage rating up to,  
1600V is available for various input voltages.  
94.0  
80.0±0.25  
24.5  
24.5  
2-φ6.5  
Isolated mounting base  
Two elements in a package for simple (single and three phase) bridge  
connections  
Highly reliable glass passivated chips  
High surge current capability  
1
2
3
Applications)  
Various rectifiers, Battery chargers, DC motor drives  
13.0  
3-M6×10  
NAME PLATE  
Unit:㎜  
Maximum Ratings  
Tj25unless otherwise specified)  
Ratings  
DD200KB80 DD200KB120  
Symbol  
Item  
Unit  
DD200KB40  
400  
DD200KB160  
1600  
VRRM  
VRSM  
Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
800  
960  
1200  
1300  
V
V
480  
1700  
Ratings  
200  
Symbol  
IFAV)  
Item  
Conditions  
Unit  
A
Average Forward Current  
R.M.S. Forward Current  
Surge Forward Current  
Single phase, half wave, 180conduction, Tc=106℃  
Single phase, half wave, 180conduction, Tc=106℃  
IFRMS)  
310  
A
IFSM  
Z
A
1cycle, 50/60H , peak value, non-repetitive  
5000/5500  
125000  
2
2
2
I
I t  
Value for one cycle of surge current  
A S  
t
Tj  
Operating Junction Temperature  
Storage Temperature  
40 to 150  
40 to 125  
2500  
V
Tstg  
VISO  
A.C. 1minute  
Isolation Breakdown VoltageR.M.S.)  
MountingM6Recommended Value 2.5-3.925-40)  
TerminalM6Recommended Value 2.5-3.925-40)  
Typical Value  
4.748)  
4.748)  
240  
Mounting  
Torque  
Nm  
(㎏fB)  
Mass  
g
Electrical Characteristics  
Ratings  
50  
Symbol  
IRRM  
Item  
Conditions  
Unit  
mA  
V
Repetitive Peak Reverse Current, max.  
Forward Voltage Drop, max.  
Thermal Impedance, max.  
j
R
RRM  
T 150℃,V V  
VFM  
j
F
1.30  
T 25℃,I 620A  
Junction to case  
0.17  
Rthj-c)  
/W  
SanRex  
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

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