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DB103SF1 PDF预览

DB103SF1

更新时间: 2024-09-19 21:08:03
品牌 Logo 应用领域
扬杰 - YANGJIE 光电二极管
页数 文件大小 规格书
4页 704K
描述
Bridge Rectifier Diode,

DB103SF1 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PDSO-G4Reach Compliance Code:unknown
风险等级:5.58其他特性:UL RECOGNIZED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:200 V
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DB103SF1 数据手册

 浏览型号DB103SF1的Datasheet PDF文件第2页浏览型号DB103SF1的Datasheet PDF文件第3页浏览型号DB103SF1的Datasheet PDF文件第4页 
RoHS  
DB101S THRU DB107S  
Bridge Rectifiers  
COMPLIANT  
Features  
UL recognition, file #E313149  
● Ideal for automated placement  
High surge current capability  
Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
Typical Applications  
General purpose use in AC/DC bridge full wave rectification for  
SMPS, lighting ballast, adapter, battery charger, home  
appliances, office equipment, and telecommunication  
applications.  
Mechanical Data  
ackage: DBS  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, Halogen free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
As marked on body  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
DB101S DB102S DB103S DB104S DB105S DB106S DB107S  
PARAMETER  
SYMBOL UNIT  
Device marking code  
DB101S DB102S DB103S DB104S DB105S DB106S DB107S  
VRRM  
Repetitive peak reverse voltage  
Average rectified output  
V
A
50  
100  
200  
400  
1.0  
600  
800  
1000  
On glass-epoxi  
I
current @60Hz sine wave,  
O
substrate  
R-load, Ta=40  
Surge(non-repetitive)forward current  
@60Hz half sine wave, 1 cycle, Tj=25℃  
I
A
A2s  
FSM  
I2t  
30  
Current squared time  
@1ms≤t≤8.3ms Tj=25, Rating of per diode  
3.7  
Storage temperature  
Junction temperature  
T
-55 ~+150  
-55 ~+150  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
CONDITIONS  
DB101S DB102S DB103S DB104S DB105S DB106S DB107S  
PARAMETER  
SYMBOL  
UNIT  
Maximum instantaneous forward  
voltage drop per diode  
V
V
1.00  
5
F
I
=0.5A  
FM  
Maximum DC reverse current at  
rated DC blocking voltage per diode  
I
RRM  
VRM=VRRM  
μA  
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-S010  
Rev. 2.1, 28-Apr-14  
www.21yangjie.com  

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