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DA6X103Q0R PDF预览

DA6X103Q0R

更新时间: 2024-11-21 19:59:59
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
5页 336K
描述
Mixer Diode, Very High Frequency, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN

DA6X103Q0R 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SC-74, 6 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:7.79配置:2 BANKS, COMMON CATHODE, 2 ELEMENTS
最大二极管电容:15 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE频带:VERY HIGH FREQUENCY
JESD-30 代码:R-PDSO-G6元件数量:4
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DA6X103Q0R 数据手册

 浏览型号DA6X103Q0R的Datasheet PDF文件第2页浏览型号DA6X103Q0R的Datasheet PDF文件第3页浏览型号DA6X103Q0R的Datasheet PDF文件第4页浏览型号DA6X103Q0R的Datasheet PDF文件第5页 
Doc No. TT4-EA-12383  
Revision . 2  
Switching Diode  
DA6X103Q0R  
DA6X103Q0R  
Silicon epitaxial planar type  
Unit: mm  
2.9  
0.5  
For high speed switching circuits  
0.13  
0.3  
6
5
4
Features  
Short reverse recovery time trr  
Low terminal capacitance Ct  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  
1
2
3
1.1  
Marking Symbol:  
24  
(0.95)(0.95)  
1.9  
Basic Part Number :  
Dual DA3X103E (Individual)  
1. Cathode 1,2 4. Cathode 3,4  
Packaging  
2. Anode 3  
3. Anode 4  
5. Anode 2  
6. Anode 1  
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  
Panasonic  
JEITA  
Mini6-G4-B  
SC-74  
Code  
SOT-457  
Absolute Maximum Ratings Ta = 25 C  
Parameter  
Reverse voltage  
Symbol  
VR  
Rating  
80  
Unit  
V
Internal Connection  
Maximum peak reverse voltage  
VRM  
IF  
IFM  
IFSM  
Tj  
Topr  
Tstg  
80  
100  
225  
500  
V
6
5
4
3
Forward current *1  
mA  
mA  
mA  
C  
C  
C  
Peak forward current *1  
Non-repetitive peak forward surge current *1,*2  
Junction temperature  
Operating ambient temperature  
Storage temperature  
150  
-40 to +85  
-55 to +150  
1
2
Note) *1 Value in single diode used  
*2 t = 1 s  
Page 1 of 4  
Establishe d : 2010-02-22  
Revised  
: 2013-06-28  

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