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DA6J101K PDF预览

DA6J101K

更新时间: 2024-11-21 20:58:19
品牌 Logo 应用领域
松下 - PANASONIC 测试光电二极管
页数 文件大小 规格书
3页 368K
描述
Mixer Diode, Very High Frequency, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, 6 PIN

DA6J101K 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.74配置:SEPARATE, 3 ELEMENTS
最大二极管电容:2 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE最大正向电压 (VF):1.2 V
频带:VERY HIGH FREQUENCYJESD-30 代码:R-PDSO-F6
元件数量:3端子数量:6
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:80 V
最大反向电流:0.1 µA最大反向恢复时间:0.003 µs
反向测试电压:75 V子类别:Other Diodes
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DA6J101K 数据手册

 浏览型号DA6J101K的Datasheet PDF文件第2页浏览型号DA6J101K的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DA6J101K  
Silicon epitaxial planar type  
For high speed switching circuits  
DA6X101K in SMini3 type package  
Features  
Package  
Small reverse current IR  
Code  
Short reverse recovery time trr  
SMini6-F3-B  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Package dimension clicks here.  
Click!  
Pin Name  
Basic Part Number  
1:Anode-1  
2:Anode-2  
3: Anode-3  
4: Cathode-3  
5: Cathode-2  
6: Cathode-1  
Triple DA2J101 (Parallel)  
Packaging  
Marking Symbol: 21  
Internal Connection  
DA6J101K0R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25°C  
6
5
4
3
Parameter  
Symbol  
VR  
Rating  
80  
Unit  
V
Reverse voltage  
Maximum peak reverse voltage  
VRM  
IF  
80  
V
1
Forward current *  
100  
mA  
mA  
mA  
°C  
1
2
1
Peak forward current *  
IFM  
225  
2
Non-repetitive peak forwardsurgecurrent*  
IFSM  
Tj  
500  
Junction temperature  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
Note) 1: Value for single diode  
*
2: 1 t = 1 s  
*
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
Forward voltage  
Reverse voltage  
Reverse current  
VF  
VR  
IR  
IF = 100 mA  
IR = 100 mA  
VR = 75 V  
1.2  
80  
V
100  
2
nA  
pF  
ns  
Terminal capacitance  
Ct  
VR = 0 V, f = 1 MHz  
Reverse recovery time *  
trr  
IF = 10 mA, VR = 6 V, Irr = 0.25 × IR  
3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. Absolute frequency of input and output is 100 MHz  
3. : trr measurement circuit  
*
Input Pulse  
tp  
Output Pulse  
trr  
Bias Application Unit (N-50BU)  
tr  
t
10%  
IF  
t
A
90%  
VR  
I
rr = 0.25 ×  
F = 10 mA  
VR = 6 V  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
I
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
Wave Form Analyzer  
(SAS-8130)  
Ri = 50 Ω  
Publication date: February 2012  
Ver. DED  
1

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