Datasheet > D882

D882

更新时间： 2024-02-27 12:53:34

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	304K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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D882 数据手册

D882

TRANSISTOR (NPN)

SOT-89

1. ^BASE

FEATURES

Power dissipation

2. COLLECTOR

3. ^EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

0.5

℃

T_J

150

-55-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 100μA, I_E=0

I_C= 10mA, I_B=0

I_E= 100μA, I_C=0

V_CB= 40V, I_E=0

V_CE= 30V, I_B=0

V_EB= 6V, I_C=0

µA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

h_FE(1)

V_CE=2V, I_C= 1A

V_CE=2V, I_C= 100mA

I_C= 2A, I_B= 0.2 A

V_CE= 5V , Ic=0.1A

f =10MHz

400

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.5

1.5

Transition frequency

f_T

MHz

CLASSIFICATION OF h_FE(1)

200-400

Rank

60-120

100-200

160-320

Range

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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