Datasheet > D882

D882

更新时间： 2024-01-19 16:20:31

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	272K
描述
Plastic Encapsulate Transistors

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D882 数据手册

D882

NPN Type

Elektronische Bauelemente

Plastic Encapsulate Transistors

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-126

3.2±

0.2

8.0±0.2

2.0±

0.2

4.14±0.1

Features

O3.2±0.1

O2.8±0.1

11.0±0.2

1.4±0.1

MAXIMUM RATINGS* T_A=25^oCunless otherwise noted

1.27±0.1

Symbol

Parameter

Value

Units

15.3±0.2

V_CBO

Collector-Base Voltage

0.76±0.1

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

2.28 Typ.

0.5±

0.1

4.55±0.1

Collector Current –Continuous

Collector Dissipation

P_C

1.25

-55-150

^oC

1: Emitter

2: Collector

3: Base

P_D

Total Device Dissipation

Junction and Storage Temperature

T ,

T_stg

Dimensions in Millimeters

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

Ic=100uA ,I_E=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 10 mA , I_B=0

I_E= 100 mA ,I_C=0

V_CB=40 V , I_E=0

V_CE=30 V , I_B=0

V_EB=6V , I_C=0

V_CE= 2V, I_C= 1A

V_CE=2V, I_C= 100mA

I_C=2A, I_B= 0.2A

Collector cut-off current

I_CEO

I_EBO

Emitter cut-off current

h_FE(1)

400

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

_CE(sat)

_BE(sat)

0.5

1.5

_CE=5 V, I_C=0.1mA

Transition frequency

f _T

MHz

f = 10MHz

CLASSIFICATION OF hFE₍₁₎

200-400

Rank

Range

60-120

100-200

160-320

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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