Datasheet > D882

D882

更新时间： 2024-10-04 09:55:07

品牌	Logo	应用领域
平盛电子 - PFS		晶体晶体管
页数	文件大小	规格书
2页	289K
描述
TRANSISTOR ( NPN )

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数据手册

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D882 数据手册

D882 ^{TRANSISTOR ( NPN )}

TO-126

1. EMITTER

2. COLLECTOR

3. BASE

1 2 3

MAXIMUM RATINGS* T_A=25℃ unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector Current -Continuous

Total Device Dissipation

P_D

1.25

150

-55-150

℃

T_J

Junction Temperature

T_stg

Junction and Storage Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be

impaired.

ELECTRICAL CHARACTERISTICS(Tamb=25℃

unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=100uA ,I_E=0

I_C= 10 mA , I_B=0

I_E= 100 mA ,I_C=0

V_CB=40 V , I_E=0

V_CE=30 V , I_B=0

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

V_EB=6V ,

I_C=0

h_FE(1)

V_CE= 2V, I_C= 1A

V_CE=2V, I_C= 100mA

I_C=2A, I_B= 0.2A

400

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

0.5

1.5

V_BE(sat)

f _T

V_CE=5 V, I_C=0.1mA

f = 10MHz

Transition frequency

MHz

(1)

CLASSIFICATION OF hFE

200-400

Rank

Range

60-120

100-200

160-320

Web Site:

WWW.PS-PFS.COM

中文翻译

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