5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率双极晶体管> D45H11G
D45H11G PDF预览

D45H11G

更新时间： 2024-09-13 03:28:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 68K
描述
Complementary Silicon Power Transistors

阅读下载

中文翻译

获取价格

D45H11G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.75
Factory Lead Time：1 week风险等级：0.76
其他特性：LEADFORM OPTIONS ARE AVAILABLE外壳连接：COLLECTOR
最大集电极电流 (IC)：10 A集电极-发射极最大电压：80 V
配置：SINGLE最小直流电流增益 (hFE)：40
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：50 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Matte Tin (Sn) - annealed
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：40 MHz
Base Number Matches：1

D45H11G 数据手册

 浏览型号D45H11G的Datasheet PDF文件第2页浏览型号D45H11G的Datasheet PDF文件第3页浏览型号D45H11G的Datasheet PDF文件第4页浏览型号D45H11G的Datasheet PDF文件第5页 
D44H Series (NPN),  
D45H Series (PNP)  
Preferred Devices  
Complementary Silicon  
Power Transistors  
These series of plastic, silicon NPN and PNP power transistors can  
be used as general purpose power amplification and switching such as  
output or driver stages in applications such as switching regulators,  
converters and power amplifiers.  
http://onsemi.com  
10 AMP COMPLEMENTARY  
SILICON POWER  
Features  
• Low Collector−Emitter Saturation Voltage  
TRANSISTORS 60, 80 VOLTS  
V
CE(sat)  
= 1.0 V (Max) @ 8.0 A  
• Fast Switching Speeds  
• Complementary Pairs Simplifies Designs  
• Pb−Free Packages are Available*  
MARKING  
DIAGRAM  
4
MAXIMUM RATINGS  
TO−220AB  
CASE 221A−09  
Rating  
Symbol  
Value  
Unit  
D4xHyyG  
AYWW  
Collector−Emitter Voltage  
D44H8, D45H8  
V
Vdc  
CEO  
STYLE 1  
1
2
3
60  
80  
D44H11, D45H11  
Emitter Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
D4xHyy = Device Code  
x = 4 or 5  
Collector Current  
− Continuous  
I
C
yy = 8 or 11  
10  
20  
− Peak (Note 1)  
A
Y
= Assembly Location  
= Year  
Total Power Dissipation  
P
W
D
WW  
G
= Work Week  
= Pb−Free Package  
@ T = 25°C  
70  
2.0  
C
@ T = 25°C  
A
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
ORDERING INFORMATION  
†
50 Units/Rail  
50 Units/Rail  
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
Characteristic  
D44H8  
TO−220  
Symbol  
Max  
1.8  
Unit  
_C/W  
_C/W  
_C  
D44H8G  
TO−220  
(Pb−Free)  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
R
q
JA  
62.5  
275  
D44H11  
TO−220  
50 Units/Rail  
50 Units/Rail  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
D44H11G  
TO−220  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
D45H8  
TO−220  
50 Units/Rail  
50 Units/Rail  
D45H8G  
TO−220  
(Pb−Free)  
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.  
D45H11  
TO−220  
50 Units/Rail  
50 Units/Rail  
D45H11G  
TO−220  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 9  
D44H/D  
 
12345

中文翻译

下载PDF

D45H11G 替代型号

型号 品牌 替代类型 描述 数据表
D45H11 ONSEMI

类似代替

 COMPLEMENTARY SILICON POWER TRANSISTORS
D45H11 STMICROELECTRONICS

功能相似

 PNP SILICON POWER TRANSISTORS

与D45H11G相关器件

型号 品牌 获取价格 描述 数据表
D45H11J3 CYSTEKEC

获取价格

 		Low Vcesat PNP Epitaxial Planar Transistor
D45H11J69Z FAIRCHILD

获取价格

 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
D45H11N MOTOROLA

获取价格

 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
D45H11T MOTOROLA

获取价格

 		10A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
D45H11UA MOTOROLA

获取价格

 		10A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
D45H11W MOTOROLA

获取价格

 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
D45H12 NJSEMI

获取价格

 		Trans GP BJT PNP 80V 10A 3-Pin(3+Tab) TO-220 Tube
D45H1-6200 RENESAS

获取价格

 		10A, 30V, PNP, Si, POWER TRANSISTOR, TO-220AB
D45H1-6226 RENESAS

获取价格

 		Power Bipolar Transistor, 10A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
D45H1-6255 RENESAS

获取价格

 		10A, 30V, PNP, Si, POWER TRANSISTOR, TO-220AB

与D45H11G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证