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D45H1J69Z PDF预览

D45H1J69Z

更新时间: 2024-11-05 19:56:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
3页 198K
描述
Power Bipolar Transistor, 10A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

D45H1J69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.77
最大集电极电流 (IC):10 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHzBase Number Matches:1

D45H1J69Z 数据手册

 浏览型号D45H1J69Z的Datasheet PDF文件第2页浏览型号D45H1J69Z的Datasheet PDF文件第3页 
D45H SERIES  
PNP EPITAXIAL SILICON TRANSISTOR  
GENERAL PURPOSE POWER APPLICATION  
AND SWITCHING  
· Low Collector-Emitter Saturation Voltage:  
VCE(sat) = -1V (MAX)@-8A  
TO-220  
· Fast Switching Speeds  
ABSOLUTE MAXIMUM RATINGS  
Characteristic  
Symbol  
Rating  
Unit  
V
V
V
V
V
A
A
W
W
°C  
°C  
Collector-Emitter Voltage : D45H 1,2  
: D45H 4,5  
VCEO  
-30  
-45  
-60  
-80  
-5  
-10  
-20  
50  
: D45H 7,8  
: D45H 10,11  
1.Base 2.Collector 3.Emitter  
Emitter Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Collector Dissipation (TC=25°C)  
Collector Dissipation (TA=25°C)  
Junction Temperature  
Storage Temperature  
VEBO  
IC  
IC  
PC  
PC  
1.67  
150  
-55 ~ 150  
TJ  
TSTG  
ELECTRICAL CHARACTERISTICS (TC =25°C)  
Characteristic  
Collector Cutoff Current  
Symbol  
ICES  
Test Conditions  
VCE = Rated VCEO, VEB = 0  
VEB = - 5V, IC = 0  
Min  
Typ  
Max  
-10  
Unit  
mA  
Emitter Cutoff Current  
* DC Current Gain : D45H 1,4,7,10  
: D45H 2,5,8,11  
IEBO  
-100  
mA  
h FE1  
VCE = - 1V, IC = - 2A  
35  
60  
20  
40  
:
: D45H 1, 4, 7, 10  
: D45H 2, 5, 8, 11  
h FE2  
VCE = - 1V, IC = - 4A  
-1  
-1  
V
V
* Collector Emitter Saturation Voltage  
: D45H 1, 4, 7 10  
VCE(sat)  
IC = - 8A, IB = - 0.8A  
IC = - 8A, IB = - 0.4A  
IC = - 8A, IB = - 0.8A  
VCE = - 10V, IC = - 0.5A  
VCB = - 10V, f = 1MHz  
IC = - 5A, IB1 = - 0.5A  
IB1 = IB2 = - 0.5A  
-1.5  
V
: D45H 2, 5, 8,11  
40  
230  
135  
500  
100  
MHz  
pF  
ns  
ns  
ns  
* Base Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
Turn On Time  
VBE (sat)  
fT  
COB  
tON  
tSTG  
tF  
Storage Time  
Fall Time  
Rev. B.1  
ã
1999 Fairchild Semiconductor Corporation  

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