Datasheet > D4535D04

D4535D04

更新时间： 2022-02-26 11:09:32

品牌	Logo	应用领域
尼尔 - NELLSEMI		/
页数	文件大小	规格书
5页	648K
描述
Standard Recovery Diodes

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数据手册

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D4535D04 数据手册

RoHS

D4535D Series

Nell High Power Products

FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

4535(2300)

55(85)

UNIT

ºC

Maximum average forward current

at heatsink temperature

180° conduction, half sine wave

Double side (single side) cooled

I_F(AV)

I_F(RMS)

25°C heatsink temperature double side cooled

Maximum RMS forward current

8200

44000

46070

36960

38700

9680

t = 10ms

No voltage

reapplied

t = 8.3ms

Maximum peak, one cycle

non-reptitive surge current

I_FSM

t = 10ms

100%V_RRM

reapplied

t = 8.3ms

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

Sinusoidal half wave,

initial T_J= T_Jmaximum

No voltage

reapplied

8808

kA²s

Maximum l²t for fusing

I²t

6830

100%V_RRM

reapplied

6215

I²√t

kA²√s

t = 0.1 to 10 ms, no voltage reapplied

l_FM=13630A,T_J=T_Jmaximum

Maximum l²√t for fusing

96800

0.770

0.055

1.10

Maximum value of threshold voltage

Maximum value of forward slope resistance

F(TO)

r_t

mΩ

l_pk= 6400A

Maximum forward voltage drop

V_FM

T_J=T_Jmaximum

l_pk= 13630A

1.40

THERMAL AND MECHANICAL SPECIFICATIONS

SYMBOL

TEST CONDITIONS

VALUES

-40 to 190

-55 to 200

0.044

UNIT

PARAMETER

Maximum junction operating temperature range

Maximum storage temperature range

T_J

ºC

T_stg

DC operation single side cooled

DC operation double side cooled

Maximum thermal resistance, junction to heatsink

R_thJ-hs

K/W

0.022

22250

(2250)

Mounting force, ±10%

(kg)

Approximate weight

Case style

425

TO-200AC (K-PUK), Nell’s D-type Capsule

RthJC CONDUCTION

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

TEST CONDUCTIONS

UNITS

CONDUCTION ANGEL

SINGLE SIDE DOUBLE SIDE

SINGLE SIDE

DOUBLE SIDE

180°

120°

90°

60°

30°

0.002

0.003

0.004

0.007

0.002

0.003

0.004

0.007

0.001

0.002

0.003

0.004

0.007

0.001

0.002

0.003

0.004

T_J= T_Jmaximum

K/W

0.007

Note

• The table above shows the increment of thermal resistance R_thJ-hswhen devices operate at different conduction angles than DC

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