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D45C

更新时间： 2024-10-27 22:29:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
4页	98K
描述
4.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS

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D45C 数据手册

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SEMICONDUCTOR TECHNICAL DATA

4.0 AMPERE

COMPLEMENTARY

SILICON

. . . for general purpose driver or medium power output stages in CW or switching

applications.

POWER TRANSISTORS

80 VOLTS

•

Low Collector–Emitter Saturation Voltage — 0.5 V (Max)

High f for Good Frequency Response

Low Leakage Current

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter Base Voltage

CEO

VCES

5.0

Collector Current — Continuous

Peak (1)

4.0

6.0

Total Power Dissipation @ T = 25 C

1.67

Watts

W/ C

Total Power Dissipation @ T = 25 C

Operating and Storage Junction Temperature Range

T , T

–55 to 150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

4.2

Unit

C/W

Thermal Resistance, Junction to Case

θJC

Thermal Resistance, Junction to Ambient

Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds

θJA

275

(1) Pulse Width

6.0 ms, Duty Cycle

50%.

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

DC Current Gain

—

= 1.0 Vdc, I = 0.2 Adc)

120

—

= 1.0 Vdc, I = 1.0 Adc)

= 1.0 Vdc, I = 2.0 Adc)

(REPLACES D44C)

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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