Datasheet > D44H_06

D44H_06

更新时间： 2024-11-02 03:28:11

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
5页	68K
描述
Complementary Silicon Power Transistors

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中文翻译

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数据手册

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D44H_06 数据手册

D44H Series (NPN),

D45H Series (PNP)

Preferred Devices

Complementary Silicon

Power Transistors

These series of plastic, silicon NPN and PNP power transistors can

be used as general purpose power amplification and switching such as

output or driver stages in applications such as switching regulators,

converters and power amplifiers.

http://onsemi.com

10 AMP COMPLEMENTARY

SILICON POWER

Features

• Low Collector−Emitter Saturation Voltage

TRANSISTORS 60, 80 VOLTS

CE(sat)

= 1.0 V (Max) @ 8.0 A

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• Pb−Free Packages are Available*

MARKING

DIAGRAM

MAXIMUM RATINGS

TO−220AB

CASE 221A−09

Rating

Symbol

Value

Unit

D4xHyyG

AYWW

Collector−Emitter Voltage

D44H8, D45H8

Vdc

CEO

STYLE 1

D44H11, D45H11

Emitter Base Voltage

5.0

Vdc

Adc

D4xHyy = Device Code

x = 4 or 5

Collector Current

− Continuous

yy = 8 or 11

− Peak (Note 1)

= Assembly Location

= Year

Total Power Dissipation

= Work Week

= Pb−Free Package

@ T = 25°C

2.0

@ T = 25°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

ORDERING INFORMATION

†

50 Units/Rail

Device

Package

Shipping

THERMAL CHARACTERISTICS

Characteristic

D44H8

TO−220

Symbol

Max

1.8

Unit

_C/W

D44H8G

TO−220

(Pb−Free)

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

62.5

275

D44H11

TO−220

50 Units/Rail

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

D44H11G

TO−220

(Pb−Free)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

D45H8

TO−220

50 Units/Rail

D45H8G

TO−220

(Pb−Free)

1. Pulse Width v 6.0 ms, Duty Cycle v 50%.

D45H11

TO−220

50 Units/Rail

D45H11G

TO−220

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 9

D44H/D

12 3 4 5

中文翻译

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与D44H_06相关器件

型号	品牌	获取价格	描述	数据表
D44H_07	ONSEMI	获取价格	Complementary Silicon Power Transistors
D44H1	FAIRCHILD	获取价格	Power Bipolar Transistor, 10A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H1	MOSPEC	获取价格	POWER TRANSISTORS(10A,30-80V,50W)
D44H1	BOCA	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
D44H1	NJSEMI	获取价格	Trans GP BJT NPN 30V 20A 3-Pin(3+Tab) TO-220
D44H1/J69Z	TI	获取价格	30V, NPN, Si, POWER TRANSISTOR
D44H10	ONSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
D44H10	MOTOROLA	获取价格	10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
D44H10	MOSPEC	获取价格	POWER TRANSISTORS(10A,30-80V,50W)
D44H10	BOCA	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS

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