Datasheet > D44H_07

D44H_07

更新时间： 2024-11-02 09:52:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
5页	82K
描述
Complementary Silicon Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

D44H_07 数据手册

D44H Series (NPN),

D45H Series (PNP)

Preferred Devices

Complementary Silicon

Power Transistors

These series of plastic, silicon NPN and PNP power transistors can

be used as ꢀgeneral purpose power amplification and switching such

as output or driver stages in applications such as switching regulators,

converters and power amplifiers.

http://onsemi.com

10 AMP COMPLEMENTARY

SILICON POWER

Features

•ꢁLow Collector-Emitter Saturation Voltage

TRANSISTORS 60, 80 VOLTS

CE(sat)

= 1.0 V (Max) @ 8.0 A

•ꢁFast Switching Speeds

•ꢁComplementary Pairs Simplifies Designs

•ꢁPb-Free Packages are Available*

MARKING

DIAGRAM

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

TO-220AB

CASE 221A-09

STYLE 1

D4xHyyG

AYWW

Collector-Emitter Voltage

D44H8, D45H8

D44H11, D45H11

CEO

Vdc

Emitter Base Voltage

5.0

Vdc

Adc

D4xHyy = Device Code

x = 4 or 5

yy = 8 or 11

Collector Current

- Continuous

- Peak (Note 1)

= Assembly Location

= Year

= Work Week

Total Power Dissipation

@ T = 25°C

2.0

= Pb-Free Package

@ T = 25°C

Operating and Storage Junction

Temperature Range

T , T

-55 to +150

°C

stg

ORDERING INFORMATION

†

50 Units/Rail

THERMAL CHARACTERISTICS

Characteristic

Device

Package

Shipping

Symbol

Max

1.8

Unit

°C/W

°C

D44H8

TO-220

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

D44H8G

TO-220

(Pb-Free)

62.5

275

D44H11

TO-220

50 Units/Rail

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

D44H11G

TO-220

(Pb-Free)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Width v 6.0 ms, Duty Cycle v 50%.

D45H8

TO-220

50 Units/Rail

D45H8G

TO-220

(Pb-Free)

D45H11

TO-220

50 Units/Rail

D45H11G

TO-220

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

November, 2007 - Rev. 10

Publication Order Number:

D44H/D

12 3 4 5

中文翻译

下载PDF

与D44H_07相关器件

型号	品牌	获取价格	描述	数据表
D44H1	FAIRCHILD	获取价格	Power Bipolar Transistor, 10A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H1	MOSPEC	获取价格	POWER TRANSISTORS(10A,30-80V,50W)
D44H1	BOCA	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
D44H1	NJSEMI	获取价格	Trans GP BJT NPN 30V 20A 3-Pin(3+Tab) TO-220
D44H1/J69Z	TI	获取价格	30V, NPN, Si, POWER TRANSISTOR
D44H10	ONSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
D44H10	MOTOROLA	获取价格	10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
D44H10	MOSPEC	获取价格	POWER TRANSISTORS(10A,30-80V,50W)
D44H10	BOCA	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
D44H10	SAVANTIC	获取价格	Silicon NPN Power Transistors

与D44H_07相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

5
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

D44H_07

D44H_07 数据手册

与D44H_07相关器件

与D44H_07相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

D44H_07

D44H_07 数据手册

与D44H_07相关器件

与D44H_07相关文章

您还可以找

您在本页遇到什么问题？