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D44H10 PDF预览

D44H10

更新时间: 2024-02-27 08:36:35
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 91K
描述
Silicon NPN Power Transistors

D44H10 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:PLASTIC, TO-220AB, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.82
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

D44H10 数据手册

 浏览型号D44H10的Datasheet PDF文件第2页浏览型号D44H10的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
D44H10  
DESCRIPTION  
·With TO-220C package  
·Fast switching speeds  
·Low collector saturation voltage  
APPLICATIONS  
·For general purpose power amplification  
and switching regulators,converters and  
power amplifiers applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings (Tc=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
CONDITIONS  
Open emitter  
VALUE  
80  
UNIT  
V
V
V
A
A
Open base  
80  
Open collector  
5
Collector current (DC)  
Collector current-Peak  
10  
ICM  
20  
TC=25ꢀ  
Ta=25ꢀ  
50  
PD  
Total power dissipation  
W
1.67  
150  
-55~150  
Junction temperature  
Storage temperature  
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-C  
Thermal resistance from junction to case  
2.5  
/W  

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