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D2021UK

更新时间: 2024-12-01 14:55:19
品牌 Logo 应用领域
TTELEC /
页数 文件大小 规格书
5页 103K
描述
Gold metallised multi-purpose silicon DMOS RF FET

D2021UK 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, SO-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.69
Is Samacsys:N其他特性:LOW NOISE
配置:SINGLE最小漏源击穿电压:65 V
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-XDSO-G8JESD-609代码:e4
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:GOLD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

D2021UK 数据手册

 浏览型号D2021UK的Datasheet PDF文件第2页浏览型号D2021UK的Datasheet PDF文件第3页浏览型号D2021UK的Datasheet PDF文件第4页浏览型号D2021UK的Datasheet PDF文件第5页 
TetraFET  
D2021UK  
ROHS COMPLIANT  
METAL GATE RF SILICON FET  
MECHANICAL DATA  
A
N
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
8
1
2
3
4
D
7
6
5
C
B
P
7.5W – 28V – 1GHz  
SINGLE ENDED  
H
K
FEATURES  
M
L
J
E
F
• SIMPLIFIED AMPLIFIER DESIGN  
• SUITABLE FOR BROAD BAND APPLICATIONS  
G
SO8 PACKAGE  
PIN 1 – SOURCE  
PIN 2 – DRAIN  
PIN 3 – DRAIN  
PIN 4 – SOURCE  
PIN 5 – SOURCE  
PIN 6 – GATE  
• LOW C  
rss  
PIN 7 – GATE  
PIN 8 – SOURCE  
• SIMPLE BIAS CIRCUITS  
• LOW NOISE  
Dim.  
A
B
C
D
E
F
G
mm  
4.06  
5.08  
1.27  
0.51  
3.56  
4.06  
1.65  
Tol.  
Inches  
0.160  
0.200  
0.050  
0.020  
0.140  
0.160  
0.065  
Tol.  
±0.08  
±0.08  
±0.08  
±0.08  
±0.08  
±0.08  
±0.08  
+0.25  
-0.00  
Min.  
Max.  
Max.  
Min.  
Max.  
±0.08  
Max.  
±0.08  
±0.003  
±0.003  
±0.003  
±0.003  
±0.003  
±0.003  
±0.003  
+0.010  
-0.000  
Min.  
Max.  
Max.  
Min.  
Max.  
±0.003  
Max.  
±0.003  
• HIGH GAIN – 13 dB MINIMUM  
H
0.76  
0.030  
APPLICATIONS  
0.51  
1.02  
45°  
0°  
0.020  
0.040  
45°  
J
K
L
VHF/UHF COMMUNICATIONS  
from DC to 1 GHz  
0°  
7°  
7°  
M
N
P
0.20  
2.18  
4.57  
0.008  
0.086  
0.180  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
P
Power Dissipation  
35W  
65V  
D
BV  
BV  
Drain – Source Breakdown Voltage  
Gate – Source Breakdown Voltage  
Drain Current  
DSS  
GSS  
±20V  
I
3A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
Document Number 6906  
Issue 1  
E-mail: sales@semelab.co.uk  
Website: http://www.semelab.co.uk  

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