Datasheet > D2013UK

D2013UK

更新时间： 2023-12-06 20:03:24

品牌	Logo	应用领域
TTELEC		/
页数	文件大小	规格书
4页	61K
描述
Gold metallised multi-purpose silicon DMOS RF FET

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中文翻译

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数据手册

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D2013UK 数据手册

TetraFET

D2013UK

ROHS COMPLIANT METAL GATE RF SILICON FET

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

(

2 pls

)

20W – 28V – 1GHz

PUSH–PULL

4 pls

( )

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• VERY LOW C

PIN 1

PIN 3

PIN 5

SOURCE (COMMON) PIN 2

DRAIN 1

GATE 2

rss

DRAIN 2

GATE 1

PIN 4

• SIMPLE BIAS CIRCUITS

• LOW NOISE

DIM

6.45

1.65R

45°

16.51

6.47

18.41

1.52

4.82

24.76

1.52

0.81R

0.13

2.16

Tol.

Inches

Tol.

0.13

5°

0.254

0.065R

45°

0.005

5°

• HIGH GAIN – 10 dB MINIMUM

0.76

0.13

0.25

0.13

0.02

0.13

0.650

0.255

0.725

0.060

0.190

0.975

0.060

0.032R

0.005

0.085

0.03

0.005

0.010

0.005

0.001

0.005

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1MHz to 2 GHz

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Power Dissipation

83W

65V

Drain – Source Breakdown Voltage *

Gate – Source Breakdown Voltage *

Drain Current *

DSS

GSS

±20V

D(sat)

Storage Temperature

–65 to 150°C

200°C

stg

Maximum Operating Junction Temperature

* Per Side

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim.12/00

12 3 4

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