Datasheet > D2015UK

D2015UK

更新时间： 2023-12-06 20:10:11

品牌	Logo	应用领域
TTELEC		局域网放大器晶体管
页数	文件大小	规格书
4页	275K
描述
Gold metallised multi-purpose silicon DMOS RF FET

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中文翻译

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数据手册

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D2015UK 数据手册

RF Silicon Mosfet

5W 500MHz 28V Single-Ended

D2015UK

Features:

•

Simplified Amplifier Design

Suitable for Broad Band Applications

Low C

rss

•

Simple Bias Circuits

Low Noise

High Gain – 13dB Minimum

RoHS Compliant

Description:

Single-Ended RF Silicon Mosfet. 5W at 500MHz, 28V

Absolute Maximum Ratings (T_A= 25°C unless otherwise noted)

Power Dissipation

29W

65V

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

DSS

GSS

+20V

D (sat)

Storage Temperature

-65 to +150°C

200°C

stg

Maximum Operating Junction Temperature

Thermal Properties

SYMBOL

PARAMETER

MAX

UNITS

Thermal Resistance, Junction to Case

6.0

°C/W

θJC

General Note

TT Electronics | Semelab Limited

TT Electronics reserves the right to make changes in product specification

without notice or liability. All information is subject to TT Electronics’ own

data and is considered accurate at time of going to print.

Coventry Road, Lutterworth, Leicestershire, LE17 4JB, UK | Ph: +44 (0) 1455 556565

www.ttelectronics.com | Lutterworth.sales@ttelectronics.com

Classification: Public

2915 Issue 2

Page 1 of 4

12 3 4

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