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D2019UK PDF预览

D2019UK

更新时间: 2024-09-22 22:09:23
品牌 Logo 应用领域
SEME-LAB 晶体晶体管射频放大器
页数 文件大小 规格书
2页 20K
描述
METAL GATE RF SILICON FET

D2019UK 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-MDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.08Is Samacsys:N
其他特性:LOW NOISE外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:65 V
最大漏极电流 (ID):1 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-MDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:METAL
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

D2019UK 数据手册

 浏览型号D2019UK的Datasheet PDF文件第2页 
TetraFET  
D2019UK  
METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
A
N
8
1
2
3
4
D
7
6
5
C
B
P
2.5W – 28V – 1GHz  
SINGLE ENDED  
H
K
FEATURES  
M
L
J
E
F
• SIMPLIFIED AMPLIFIER DESIGN  
• SUITABLE FOR BROAD BAND APPLICATIONS  
G
SO8 PACKAGE  
• VERY LOW C  
PIN 1 – SOURCE  
PIN 2 – DRAIN  
PIN 3 – DRAIN  
PIN 4 – SOURCE  
PIN 5 – SOURCE  
PIN 6 – GATE  
rss  
• SIMPLE BIAS CIRCUITS  
• LOW NOISE  
PIN 7 – GATE  
PIN 8 – SOURCE  
Dim.  
A
B
C
D
E
F
G
mm  
4.06  
5.08  
1.27  
0.51  
3.56  
4.06  
1.65  
Tol.  
Inches  
0.160  
0.200  
0.050  
0.020  
0.140  
0.160  
0.065  
Tol.  
• HIGH GAIN – 13 dB MINIMUM  
±0.08  
±0.08  
±0.08  
±0.08  
±0.08  
±0.08  
±0.08  
+0.25  
-0.00  
Min.  
Max.  
Max.  
Min.  
Max.  
±0.08  
Max.  
±0.08  
±0.003  
±0.003  
±0.003  
±0.003  
±0.003  
±0.003  
±0.003  
+0.010  
-0.000  
Min.  
Max.  
Max.  
Min.  
Max.  
±0.003  
Max.  
±0.003  
APPLICATIONS  
HF/VHF/UHF COMMUNICATIONS  
from 1 MHz to 2 GHz  
H
0.76  
0.030  
0.51  
1.02  
45°  
0°  
0.020  
0.040  
45°  
0°  
7°  
0.008  
0.086  
0.180  
J
K
L
7°  
M
N
P
0.20  
2.18  
4.57  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
17.5W  
case  
P
Power Dissipation  
D
BV  
BV  
Drain – Source Breakdown Voltage  
Gate – Source Breakdown Voltage  
Drain Current  
65V  
±20V  
DSS  
GSS  
I
1A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
Prelim. 9/95  
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.  

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