TetraFET
D2019UK
ROHS COMPLIANTMETAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
A
N
8
1
2
3
4
MULTI-PURPOSE SILICON
D
7
6
5
DMOS RF FET
2.5W – 28V – 1GHz
SINGLE ENDED
C
B
P
H
K
FEATURES
M
L
J
E
F
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
G
SO8 PACKAGE
• VERY LOW C
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
PIN 7 – GATE
PIN 8 – SOURCE
Dim.
A
B
C
D
E
F
G
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
Tol.
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
Tol.
• HIGH GAIN – 13 dB MINIMUM
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
H
0.76
0.030
0.51
1.02
45°
0°
0.020
0.040
45°
0°
7°
0.008
0.086
0.180
J
K
L
7°
M
N
P
0.20
2.18
4.57
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
P
Power Dissipation
17.5W
65V
D
BV
BV
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
DSS
±20V
GSS
I
1A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
Prelim. 9/95
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.