5秒后页面跳转
D1G-T PDF预览

D1G-T

更新时间: 2024-11-04 03:27:59
品牌 Logo 应用领域
美台 - DIODES 整流二极管
页数 文件大小 规格书
3页 346K
描述
1.0A GLASS PASSIVATED RECTIFIER

D1G-T 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC, T-1, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:12 weeks风险等级:5.27
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:2 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

D1G-T 数据手册

 浏览型号D1G-T的Datasheet PDF文件第2页浏览型号D1G-T的Datasheet PDF文件第3页 
D1G - D7G  
1.0A GLASS PASSIVATED RECTIFIER  
Features  
·
·
·
·
Glass Passivated Die Construction  
High Current Capability and Low Forward Voltage Drop  
Surge Overload Rating to 30A Peak  
A
B
A
Lead Free Finish, RoHS Compliant (Note 4)  
C
Mechanical Data  
D
·
·
Case: T1  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
T-1  
Dim  
A
Min  
25.40  
2.60  
0.53  
2.20  
Max  
¾
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Polarity: Cathode Band  
Terminals: Finish – Tin. Solderable per MIL-STD-202,  
B
3.20  
0.64  
2.60  
e3  
Method 208  
C
·
·
Marking: Type Number  
D
Weight: 0.13 grams (approximate)  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol D1G  
D2G  
100  
70  
D3G  
200  
140  
D4G  
D5G  
600  
420  
D6G  
800  
560  
D7G  
1000  
700  
Unit  
VRRM  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRWM  
50  
400  
V
VR  
VR(RMS)  
35  
RMS Reverse Voltage  
280  
1.0  
V
A
Average Rectified Output Current  
(Note 1)  
IO  
@ TA = 75°C  
Non-Repetitive Peak Forward Surge Current  
IFSM  
VFM  
IRM  
30  
A
V
8.3ms Single half sine-wave superimposed on rated load  
Forward Voltage  
@ IF = 1.0A  
1.0  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA = 25°C  
@ TA = 100°C  
5.0  
50  
mA  
trr  
Reverse Recovery Time (Note 3)  
Typical Total Capacitance (Note 2)  
2.0  
8.0  
ms  
pF  
CT  
R
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
100  
°C/W  
°C  
qJA  
Tj, TSTG  
-65 to +150  
Notes:  
1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Measured with I = 0.5A, I = 1A, I = 0.25A.  
F
R
rr  
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
DS29001 Rev. 3 - 2  
1 of 3  
D1G-D7G  
www.diodes.com  
ã Diodes Incorporated  

与D1G-T相关器件

型号 品牌 获取价格 描述 数据表
D1H-SERIES ETC

获取价格

Interface IC
D1JA40 ETC

获取价格

ARRAY OF INDEPENDENT DIODES|DIP
D1JAK20 ETC

获取价格

ARRAY OF INDEPENDENT DIODES|DIP
D1LNK60Z MICROSEMI

获取价格

N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET
D1M-SERIES ETC

获取价格

Interface IC
D1N20 SHINDENGEN

获取价格

General Purpose Rectifiers(200V 1A)
D1N5817 ETC

获取价格

SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0Ampere
D1N60 SHINDENGEN

获取价格

General Purpose Rectifiers(600V 1A)
D1NF60 SHINDENGEN

获取价格

Super Fast Recovery Rectifiers(600V 0.8A)
D1NJ10 SHINDENGEN

获取价格

Schottky Barrier Diode